S29GL032N11FFIS10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Part Number: S29GL032N11FFIS10
• Memory Type: NOR Flash
• Memory Size: 32 Megabits (4 Megabytes)
• Organization: 2,097,152 words x 16 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (max)
• Erase/Program Times: 1.5 ms (typical) / 10 ms (typical)

Detailed Pin Configuration

The S29GL032N11FFIS10 has a total of 48 pins. The pin configuration is as follows:

```

Pin Name Description

1 A0-A20 Address Inputs 2 DQ0-DQ15 Data Input/Output 3 CE# Chip Enable 4 OE# Output Enable 5 WE# Write Enable 6 VCC Power Supply 7 GND Ground 8 RESET# Reset 9 WP# Write Protect 10 RY/BY# Ready/Busy ... ... ... ```

Functional Features

• High-speed read and write operations allow for quick data access.
• Non-volatile memory retains data even when power is disconnected.
• Large storage capacity enables the storage of significant amounts of digital information.
• Low power consumption ensures efficient operation and extended battery life in portable devices.

Advantages

• Fast access times improve overall system performance.
• Non-volatile nature eliminates the need for constant power supply to retain data.
• Large storage capacity accommodates a wide range of applications.
• Low power consumption reduces energy usage and extends device battery life.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited endurance, with a finite number of erase/write cycles before degradation.
• Larger physical size compared to some newer memory technologies.
• Requires additional circuitry for interfacing with microcontrollers or processors.

Working Principles

The S29GL032N11FFIS10 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. The presence or absence of trapped electrons determines the binary state (0 or 1) of each memory cell. Data can be written to or read from the memory cells using appropriate voltage levels applied to the control pins.

Detailed Application Field Plans

The S29GL032N11FFIS10 is commonly used in various electronic devices that require non-volatile data storage, such as: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Networking equipment

Detailed and Complete Alternative Models

• S29GL064N11FFIS20: 64 Megabit (8 Megabyte) version of the same flash memory series.
• S29GL128N10TFI010: 128 Megabit (16 Megabyte) version with different specifications.
• S29GL256N11FAI020: 256 Megabit (32 Megabyte) alternative model with enhanced features.

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