S29GL128N10FFI010

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: S29GL128N10FFI010
• Capacity: 128 gigabits (16 gigabytes)
• Access Time: 100 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 64 megawords x 16 bits

Detailed Pin Configuration

The S29GL128N10FFI010 has a total of 56 pins, which are assigned various functions for communication and control purposes. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A21: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RY/BY#: Ready/busy status output
8. RP#/BYTE#: Reset/byte# control
9. WP#/ACC: Write protect/accelerator control
10. RE#: Read enable control
11. BYTE#(A-1): Byte enable control
12. NC: No connection (reserved)

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete pinout.)

Functional Features

• High-speed data transfer: The S29GL128N10FFI010 offers fast read and write operations, allowing for efficient data transfer between the memory and the device.
• Non-volatile storage: The flash memory retains stored data even when power is removed, ensuring data integrity and reliability.
• Large storage capacity: With a capacity of 128 gigabits, this memory chip provides ample space for storing a wide range of digital information.
• Compatibility: The parallel interface allows easy integration with various electronic devices and systems.

Advantages

• Fast access time enables quick retrieval of data.
• Non-volatile nature ensures data persistence without the need for constant power supply.
• High storage capacity accommodates large amounts of data.
• Compatibility with different devices and systems enhances versatility.

Disadvantages

• Higher power consumption compared to some other memory technologies.
• Limited endurance in terms of program/erase cycles.
• Relatively higher cost per unit compared to lower-capacity flash memory options.

Working Principles

The S29GL128N10FFI010 utilizes a floating-gate transistor structure to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The memory cells are organized into an array, and each cell can be individually programmed or erased using specific voltage levels. During read operations, the stored charges are sensed to retrieve the stored data.

Detailed Application Field Plans

The S29GL128N10FFI010 finds application in various electronic devices and systems, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• S29GL064N11TFI040
• S29GL256N11FAI020
• S29GL512N11TAI010
• S29GL01GN11TFI010
• S29GL02GN11TFI010

(Note: This is not an exhaustive list. There are several alternative models available from the same manufacturer or other manufacturers.)

In conclusion, the S29GL128N10FFI010 is a flash memory chip that offers high-speed data transfer, large storage capacity, and non-volatile storage capabilities. It finds application in various electronic devices and systems, providing reliable data storage and retrieval. While it has advantages such as fast access time and compatibility, it also has limitations like higher power consumption and limited endurance. Nonetheless, it remains a valuable component in the field of data storage technology.