S29GL128P10TFI0105

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Density: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL128P10TFI0105 has a total of 56 pins. Here is a brief overview of the pin configuration:

• VCC: Power supply voltage
• GND: Ground
• A0-A23: Address inputs
• DQ0-DQ7: Data inputs/outputs
• WE#: Write enable
• CE#: Chip enable
• OE#: Output enable
• RP#/BYTE#: Reset/byte enable
• RY/BY#: Ready/busy status
• WP#/ACC: Write protect/acceleration
• RE#: Read enable
• CLE: Command latch enable
• ALE: Address latch enable

For a detailed pin diagram and description, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed read and write operations for quick data access
• Reliable and durable memory with high endurance and long data retention
• Low power consumption for energy-efficient devices
• Wide operating temperature range for various environments
• Easy integration into electronic systems due to standard interface protocols

Advantages and Disadvantages

Advantages: - Large storage capacity for storing a significant amount of data - Fast read and write operations enhance device performance - Low power consumption prolongs battery life in portable devices - High endurance ensures reliable data storage over time - Wide operating temperature range allows usage in different environments

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some newer memory types - Requires additional circuitry for proper interfacing with the system

Working Principles

The S29GL128P10TFI0105 is based on NOR flash memory technology. It stores data using floating-gate transistors that can trap electrical charges, representing binary information as 0s and 1s. The memory cells are organized in a grid-like structure, with each cell storing one bit of data.

During a write operation, the desired data is programmed by applying a high voltage to the control gate of the selected memory cell. This causes electrons to tunnel through a thin oxide layer and get trapped in the floating gate, altering its charge and storing the desired data.

During a read operation, the stored data is retrieved by applying appropriate voltages to the memory cells and sensing the resulting current flow. The state of each memory cell is determined by comparing the sensed current with predefined thresholds.

Detailed Application Field Plans

The S29GL128P10TFI0105 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices - Communication equipment

Due to its reliability, high-speed operation, and large storage capacity, the S29GL128P10TFI0105 is suitable for applications that demand efficient and secure data storage.

Detailed and Complete Alternative Models

• S29GL064P10TFI010: 64 Megabit (8 Megabyte) variant of the same flash memory series.
• S29GL256P10TFI010: 256 Megabit (32 Megabyte) variant with higher storage capacity.
• S29GL512P10TFI010: 512 Megabit (64 Megabyte) variant with even larger storage capacity.

These alternative models offer different storage capacities to cater to specific application requirements while maintaining similar characteristics and functionality.

Note: The content provided above is a sample structure for an encyclopedia entry. The actual content may vary based on the available information and specific requirements.