Cypress Semiconductor Corp
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
S29GL256N11TFVR10

S29GL256N11TFVR10

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Surface Mount Technology (SMT)
  • Essence: Non-volatile memory for reliable data storage
  • Packaging/Quantity: Tape and Reel packaging, 250 units per reel

Specifications

  • Memory Type: NOR Flash
  • Density: 256 Megabits (32 Megabytes)
  • Organization: 16M x 16 bits
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 90 ns
  • Page Size: 512 bytes
  • Erase/Program Times: 1.5 ms/15 µs

Pin Configuration

The S29GL256N11TFVR10 has a total of 48 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. DQ0
  18. DQ1
  19. DQ2
  20. DQ3
  21. DQ4
  22. DQ5
  23. DQ6
  24. DQ7
  25. DQ8
  26. DQ9
  27. DQ10
  28. DQ11
  29. DQ12
  30. DQ13
  31. DQ14
  32. DQ15
  33. CE#
  34. OE#
  35. WE#
  36. RESET#
  37. BYTE#
  38. VCC
  39. VSS
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed read and write operations
  • Sector erase capability for efficient data management
  • Built-in hardware and software protection mechanisms
  • Low power consumption during standby mode
  • Reliable operation in harsh environmental conditions

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - Suitable for a wide range of electronic devices - Robust and durable design

Disadvantages: - Higher cost compared to other types of memory - Limited endurance (number of erase/write cycles) - Requires additional circuitry for interfacing with microcontrollers

Working Principles

The S29GL256N11TFVR10 is based on NOR Flash technology. It stores data using a grid of memory cells, where each cell represents a bit of information. The memory cells can be electrically programmed and erased, allowing for non-volatile data storage. The device utilizes a parallel interface for communication with the host system, enabling fast read and write operations.

Detailed Application Field Plans

The S29GL256N11TFVR10 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

  1. Embedded Systems: Used as boot memory or for firmware storage in microcontrollers and embedded systems.
  2. Automotive Electronics: Used for storing critical data such as engine parameters, diagnostics, and firmware updates.
  3. Industrial Control Systems: Used for data logging, configuration storage, and firmware updates in industrial automation systems.
  4. Consumer Electronics: Used in digital cameras, set-top boxes, gaming consoles, and other devices requiring large storage capacity.

Detailed and Complete Alternative Models

  1. S29GL128N10TFI010: 128 Megabit NOR Flash memory with similar specifications but lower density.
  2. S29GL512N11TFI020: 512 Megabit NOR Flash memory with higher density and similar characteristics.
  3. S29GL256P11TFI010: 256 Megabit parallel NOR Flash memory with extended temperature range.

These alternative models offer different memory densities and features to cater to specific application requirements.

Word count: 511 words

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de S29GL256N11TFVR10 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of S29GL256N11TFVR10 in technical solutions:

  1. Q: What is the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 256 megabits (32 megabytes) and operates at a voltage of 3.3V.

  2. Q: What are the typical applications for the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 is commonly used in various electronic devices such as routers, switches, set-top boxes, industrial control systems, and automotive applications.

  3. Q: What is the interface of the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 uses a parallel interface with a 16-bit data bus and supports both asynchronous and synchronous read and write operations.

  4. Q: What is the operating temperature range of the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 has an extended operating temperature range of -40°C to +85°C, making it suitable for use in harsh environments.

  5. Q: Does the S29GL256N11TFVR10 support hardware or software data protection features? A: Yes, the S29GL256N11TFVR10 supports both hardware and software data protection features, including sector lock-down and password protection.

  6. Q: What is the erase and program cycle endurance of the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 has a minimum endurance of 100,000 erase/program cycles, ensuring reliable and long-lasting data storage.

  7. Q: Can the S29GL256N11TFVR10 be used for code execution? A: Yes, the S29GL256N11TFVR10 can be used for code execution as it supports random access read operations with fast access times.

  8. Q: Does the S29GL256N11TFVR10 have any power-saving features? A: Yes, the S29GL256N11TFVR10 includes various power-saving features such as deep power-down mode and automatic sleep mode to minimize power consumption.

  9. Q: What is the supply voltage range for the S29GL256N11TFVR10? A: The S29GL256N11TFVR10 operates within a supply voltage range of 2.7V to 3.6V, making it compatible with a wide range of systems.

  10. Q: Is the S29GL256N11TFVR10 RoHS compliant? A: Yes, the S29GL256N11TFVR10 is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental regulations.

Please note that these answers are general and may vary depending on specific product specifications and application requirements.