2N7002AQ-13

Product Overview

The 2N7002AQ-13 belongs to the category of small-signal field-effect transistors (FETs) and is commonly used for switching and amplification applications. This component exhibits characteristics such as low threshold voltage, high input impedance, and low output capacitance. It is typically packaged in a SOT-23 package and is available in tape and reel packaging with a specified quantity per reel.

Specifications

• Drain-Source Voltage (V_DS): 60V
• Continuous Drain Current (I_D): 115mA
• Threshold Voltage (V_GS(th)): 1V to 2V
• Package Type: SOT-23
• Packaging: Tape and Reel

Detailed Pin Configuration

The 2N7002AQ-13 features a standard SOT-23 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

• Low threshold voltage for improved control
• High input impedance for minimal loading effects
• Low output capacitance for fast switching

Advantages and Disadvantages

Advantages

• Low threshold voltage enables efficient control in low-voltage applications
• High input impedance minimizes loading effects on driving circuits
• Low output capacitance facilitates fast switching speeds

Disadvantages

• Limited maximum drain-source voltage compared to other FETs
• Relatively low continuous drain current rating

Working Principles

The 2N7002AQ-13 operates based on the principles of field-effect transistors, utilizing an electric field to control the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans

This component finds extensive use in low-power switching applications, such as in portable electronic devices, power management circuits, and signal amplification circuits. Its low threshold voltage and high input impedance make it suitable for interfacing with low-voltage control signals.

Detailed and Complete Alternative Models

• Alternative Model 1: BS170
  • Category: Small-Signal FET
  • Specifications: V_DS = 60V, I_D = 500mA, V_GS(th) = 1V to 3V
• Alternative Model 2: IRF5305
  • Category: Power MOSFET
  • Specifications: V_DS = 55V, I_D = 31A, V_GS(th) = 2V to 4V

In conclusion, the 2N7002AQ-13 is a small-signal FET with specific characteristics that make it suitable for various low-power switching and amplification applications. Its low threshold voltage and high input impedance are key attributes that cater to the needs of modern electronic designs. While it has limitations in terms of maximum voltage and current ratings, its advantages make it a preferred choice in specific circuit requirements.