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DMN10H220LQ-13
Product Category: Integrated Circuit
Basic Information Overview: - Category: Power MOSFET - Use: Power switching applications - Characteristics: High voltage, low on-resistance, compact size - Package: LQFP-13 - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications: - Voltage Rating: 100V - Current Rating: 10A - On-Resistance: 22mΩ - Package Type: LQFP - Operating Temperature: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Source - Pin 3: Drain - Pin 4: NC - Pin 5: Source - Pin 6: Drain - Pin 7: Gate - Pin 8: NC - Pin 9: Source - Pin 10: Drain - Pin 11: Gate - Pin 12: NC - Pin 13: Source
Functional Features: - Fast switching speed - Low gate charge - Avalanche energy rated - Enhanced thermal performance
Advantages and Disadvantages: - Advantages: - High voltage rating - Low on-resistance - Compact package - Disadvantages: - Sensitive to ESD - Limited current handling capacity
Working Principles: The DMN10H220LQ-13 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of a channel.
Detailed Application Field Plans: - Power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models: - DMN10H220LQ-12 - DMN10H220LQ-14 - DMN10H220LQ-15
This comprehensive entry provides an in-depth understanding of the DMN10H220LQ-13, covering its category, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de DMN10H220LQ-13 en soluciones técnicas
Sure, here are 10 common questions and answers related to the application of DMN10H220LQ-13 in technical solutions:
What is the DMN10H220LQ-13?
- The DMN10H220LQ-13 is a high-power RF transistor designed for use in applications such as wireless infrastructure and other high-frequency amplification systems.
What is the maximum power output of the DMN10H220LQ-13?
- The DMN10H220LQ-13 can deliver a maximum power output of 10 watts.
What frequency range does the DMN10H220LQ-13 cover?
- This transistor is designed to operate within the frequency range of 2110 MHz to 2170 MHz.
What type of package does the DMN10H220LQ-13 come in?
- The DMN10H220LQ-13 comes in a compact and efficient LGA (Land Grid Array) package.
What are the typical applications for the DMN10H220LQ-13?
- Typical applications for this transistor include cellular base stations, repeaters, and other wireless infrastructure equipment.
What are the key features of the DMN10H220LQ-13?
- Some key features include high power gain, high efficiency, and excellent linearity, making it suitable for demanding RF amplification requirements.
What are the recommended operating conditions for the DMN10H220LQ-13?
- It is recommended to operate the DMN10H220LQ-13 within a supply voltage range of 28V to 32V and at a temperature range of -40°C to +85°C.
Does the DMN10H220LQ-13 require any external matching components?
- Yes, external matching components such as capacitors and inductors may be required to optimize performance in specific applications.
Can the DMN10H220LQ-13 be used in conjunction with other RF components?
- Yes, it can be integrated into RF circuits alongside other components such as filters, couplers, and mixers.
Where can I find detailed technical specifications and application notes for the DMN10H220LQ-13?
- Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer or distributor of the transistor.