IDT, Integrated Device Technology Inc
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
6116SA55DB
Ver Detalle Hojas de datos

6116SA55DB

Product Overview

Category

6116SA55DB belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

  • High-speed operation
  • Non-volatile memory
  • Low power consumption
  • Compact size

Package

6116SA55DB comes in a standard dual in-line package (DIP).

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

Each package contains one unit of 6116SA55DB.

Specifications

  • Memory capacity: 2 kilobits (256 x 8 bits)
  • Operating voltage: 5V
  • Access time: 55 nanoseconds
  • Data retention: More than 10 years
  • Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

  1. A0: Address input
  2. A1: Address input
  3. A2: Address input
  4. A3: Address input
  5. A4: Address input
  6. A5: Address input
  7. A6: Address input
  8. A7: Address input
  9. VCC: Power supply
  10. /CE: Chip enable input
  11. /OE: Output enable input
  12. D0: Data input/output
  13. D1: Data input/output
  14. D2: Data input/output
  15. D3: Data input/output
  16. D4: Data input/output
  17. D5: Data input/output
  18. D6: Data input/output
  19. D7: Data input/output
  20. GND: Ground

Functional Features

  • Random access to any memory location
  • Byte-wide data transfer
  • Easy interfacing with microprocessors
  • Low standby power consumption

Advantages and Disadvantages

Advantages

  • High-speed operation allows for quick data access
  • Non-volatile memory ensures data retention even during power loss
  • Low power consumption prolongs battery life in portable devices
  • Compact size enables integration into space-constrained systems

Disadvantages

  • Limited memory capacity compared to modern storage devices
  • Relatively slower access time compared to newer memory technologies

Working Principles

6116SA55DB utilizes a combination of electronic circuits and semiconductor technology to store and retrieve digital information. It employs a matrix of memory cells, organized in rows and columns, where each cell can store one bit of data. The address inputs are used to select the desired memory location, while the data inputs/outputs facilitate reading from or writing to the memory.

Detailed Application Field Plans

  • Embedded systems
  • Industrial automation
  • Consumer electronics
  • Telecommunications
  • Automotive electronics

Alternative Models

  • 6116SA55DC
  • 6116SA55DD
  • 6116SA55DE
  • 6116SA55DF

These alternative models offer similar specifications and functionality to 6116SA55DB, providing flexibility in choosing the most suitable option for specific applications.

Word count: 334 words

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 6116SA55DB en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of 6116SA55DB in technical solutions:

  1. Q: What is the purpose of the 6116SA55DB in technical solutions? A: The 6116SA55DB is a static random access memory (SRAM) chip commonly used for data storage and retrieval in various electronic devices.

  2. Q: What is the storage capacity of the 6116SA55DB? A: The 6116SA55DB has a storage capacity of 2 kilobits, which is equivalent to 256 bytes.

  3. Q: What voltage does the 6116SA55DB operate at? A: The 6116SA55DB operates at a voltage range of 4.5V to 5.5V.

  4. Q: Can the 6116SA55DB be used in battery-powered devices? A: Yes, the 6116SA55DB can be used in battery-powered devices as it operates within a typical voltage range for such applications.

  5. Q: Is the 6116SA55DB compatible with microcontrollers? A: Yes, the 6116SA55DB is compatible with most microcontrollers that support SRAM interfacing.

  6. Q: What is the access time of the 6116SA55DB? A: The 6116SA55DB has an access time of 55 nanoseconds, which determines how quickly data can be read from or written to the memory.

  7. Q: Can the 6116SA55DB be used in industrial applications? A: Yes, the 6116SA55DB is suitable for use in industrial applications due to its reliable performance and wide operating temperature range.

  8. Q: Does the 6116SA55DB require any external components for operation? A: Yes, the 6116SA55DB typically requires decoupling capacitors and pull-up resistors to ensure stable operation.

  9. Q: Can the 6116SA55DB be used in high-speed applications? A: While the 6116SA55DB has a relatively fast access time, it may not be suitable for extremely high-speed applications where faster memory options are available.

  10. Q: Are there any specific precautions to consider when using the 6116SA55DB? A: It is important to handle the 6116SA55DB with proper electrostatic discharge (ESD) precautions to prevent damage. Additionally, attention should be given to proper power supply and signal integrity for reliable operation.

Please note that these answers are general and may vary depending on the specific application and requirements.