Encyclopedia Entry: 71V016SA20BFI

Product Overview

Category

The 71V016SA20BFI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V016SA20BFI is available in a compact integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V016SA20BFI is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 3.3V
• Access Time: 20 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V016SA20BFI has a total of 48 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A20 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. CE1, CE2 - Chip enable inputs
6. OE - Output enable input
7. WE - Write enable input
8. UB/LB - Upper byte/lower byte control inputs
9. CLK - Clock input
10. NC - No connection (reserved pin)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed access: The 71V016SA20BFI offers fast data access, making it suitable for applications requiring quick retrieval of information.
• Low power consumption: This product is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
• Reliable performance: The 71V016SA20BFI ensures reliable operation, providing consistent and accurate data storage and retrieval.

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing.
• Large storage capacity accommodates a significant amount of digital information.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility: The 71V016SA20BFI may not be compatible with all electronic systems due to specific voltage and interface requirements.
• Cost: As a specialized memory device, the 71V016SA20BFI may have a higher price compared to more generic memory options.

Working Principles

The 71V016SA20BFI utilizes static random access memory (SRAM) technology. It stores data using flip-flop circuits, which retain information as long as power is supplied. When an address is provided, the corresponding data is accessed and made available for reading or writing.

Detailed Application Field Plans

The 71V016SA20BFI finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. 71V016SA20BF - Similar to the 71V016SA20BFI, but without the fine-pitch ball grid array (FBGA) package.
2. 71V016SA20BFGI - A variant with extended temperature range (-40°C to +125°C).
3. 71V016SA20BFI8 - A version with an extended data bus width of 16 bits.

(Note: This list is not exhaustive and may vary based on availability and specific requirements.)

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