Encyclopedia Entry: 71V35761S166BGGI

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V35761S166BGGI is a high-performance synchronous dynamic random-access memory (SDRAM) IC. It is commonly used in various electronic devices such as computers, servers, networking equipment, and consumer electronics.

Characteristics: - High-speed operation - Large storage capacity - Low power consumption - Synchronous interface - Multiple banks for concurrent access

Package: The 71V35761S166BGGI is available in a compact Ball Grid Array (BGA) package, which provides excellent thermal performance and reliability.

Essence: This IC serves as a crucial component in electronic systems, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The 71V35761S166BGGI is typically sold in reels or trays, with each reel containing a specific quantity of ICs, usually ranging from a few hundred to several thousand units.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 4 Meg x 16
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 5 ns
• Interface: Parallel
• Data Rate: 333 Mbps
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V35761S166BGGI features a total of 66 pins, including power supply, ground, address, data, control, and clock pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. /CAS
45. /RAS
46. /WE
47. /CS0
48. /CS1
49. /CS2
50. /CS3
51. /CKE
52. /CLK
53. VDD
54. VSS
55. VREF
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. NC
63. NC
64. NC
65. NC
66. NC

Functional Features

The 71V35761S166BGGI offers several functional features that enhance its performance and usability:

• Burst Mode: Supports burst read and write operations, allowing for efficient data transfer.
• Auto Precharge: Automatically precharges the memory cells after a burst operation, reducing access time.
• Power Down Mode: Provides a low-power state when the IC is not in use, conserving energy.
• On-Die Termination (ODT): Improves signal integrity by matching the impedance of the memory bus.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access and transfer. - Large storage capacity accommodates extensive data requirements. - Low power consumption contributes to energy efficiency. - Synchronous interface ensures reliable and synchronized communication with the system. - Multiple banks allow for concurrent access, enhancing overall performance.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Sensitive to electrical noise and voltage fluctuations. - Requires proper timing and synchronization with the system.

Working Principles

The 71V35761S166BGGI operates based on the principles of synchronous dynamic random-access memory. It stores digital information in a matrix of memory cells, organized into multiple banks. The IC uses a synchronous interface, where data transfers are synchronized with an external clock signal. This synchronization allows for efficient and reliable communication between the IC and the system.

During read or write operations, the IC receives commands from the system controller through control pins (/CAS, /RAS, /