71V416S12PHG

Product Overview

Category

The 71V416S12PHG belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The 71V416S12PHG is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V416S12PHG is typically packaged in trays or reels, with quantities varying based on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit x 16-bit
• Supply Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic TSOP-II

Detailed Pin Configuration

The 71V416S12PHG has a total of 48 pins, which are assigned specific functions as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. WE#
20. CE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. VSS
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed access: The 71V416S12PHG offers fast data access, enabling efficient read and write operations.
• Low power consumption: This product is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable operation: The SRAM technology used in this device ensures reliable performance and data integrity.

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Reliable operation ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory requires constant power supply to retain data.

Working Principles

The 71V416S12PHG utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the information is lost when power is removed. The device consists of an array of memory cells, organized in a 4 Megabit x 16-bit configuration. Data can be written to or read from these cells by applying appropriate control signals.

Detailed Application Field Plans

The 71V416S12PHG finds applications in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

• 71V416L10PHG
• 71V416S12YGI
• 71V416S15PHG
• 71V416S15YGI
• 71V416S20PHG
• 71V416S20YGI
• 71V416S25PHG
• 71V416S25YGI

These alternative models offer similar functionality and performance to the 71V416S12PHG, with slight variations in specifications.

In conclusion, the 71V416S12PHG is a high-speed, low-power SRAM device that provides reliable data storage and retrieval capabilities. Its compact package and versatile applications make it a valuable component in various electronic systems.