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IDT6116LA35TP

IDT6116LA35TP

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics:
    • Low-power consumption
    • High-speed operation
    • Non-volatile storage
  • Package: Through-hole DIP (Dual In-line Package)
  • Essence: Random Access Memory (RAM)
  • Packaging/Quantity: Tube packaging, 25 pieces per tube

Specifications

  • Manufacturer: Integrated Device Technology (IDT)
  • Part Number: IDT6116LA35TP
  • Memory Type: Static RAM (SRAM)
  • Organization: 2K x 8 bits
  • Operating Voltage: 5V
  • Access Time: 35 ns
  • Data Retention: More than 10 years
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 24 pins

Detailed Pin Configuration

  1. A0 - Address Input
  2. A1 - Address Input
  3. A2 - Address Input
  4. A3 - Address Input
  5. A4 - Address Input
  6. A5 - Address Input
  7. A6 - Address Input
  8. A7 - Address Input
  9. VCC - Power Supply (+5V)
  10. CE - Chip Enable
  11. OE - Output Enable
  12. WE - Write Enable
  13. I/O0 - Data Input/Output
  14. I/O1 - Data Input/Output
  15. I/O2 - Data Input/Output
  16. I/O3 - Data Input/Output
  17. I/O4 - Data Input/Output
  18. I/O5 - Data Input/Output
  19. I/O6 - Data Input/Output
  20. I/O7 - Data Input/Output
  21. GND - Ground
  22. NC - No Connection
  23. NC - No Connection
  24. NC - No Connection

Functional Features

  • High-speed operation allows for quick data access.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Non-volatile storage ensures data retention even when power is lost.
  • Easy integration into existing circuit designs due to standard pin configuration.

Advantages and Disadvantages

Advantages

  • Fast access time improves overall system performance.
  • Low power consumption extends battery life in portable devices.
  • Non-volatile storage eliminates the need for constant data backup.
  • Standard pin configuration simplifies integration into existing designs.

Disadvantages

  • Limited storage capacity (2K x 8 bits) compared to modern memory chips.
  • Relatively slower access time (35 ns) compared to newer SRAMs.
  • Requires a separate power supply (+5V) for operation.

Working Principles

The IDT6116LA35TP is a static RAM chip that stores data using flip-flops, which are bistable circuits capable of storing a single bit of information. The chip uses an array of these flip-flops organized in a 2K x 8 configuration, allowing it to store 2 kilobits (256 bytes) of data. The chip operates at a voltage of +5V and can be accessed by providing the appropriate address inputs and control signals.

Detailed Application Field Plans

The IDT6116LA35TP is commonly used in various electronic systems that require fast and non-volatile data storage. Some typical application fields include:

  1. Microcontrollers: Used as temporary storage for program instructions and data in microcontroller-based systems.
  2. Embedded Systems: Provides data storage for real-time applications, such as industrial control systems and automotive electronics.
  3. Communication Equipment: Used for buffering and caching data in networking devices, routers, and modems.
  4. Test and Measurement Instruments: Provides temporary storage for test data and measurement results in oscilloscopes, logic analyzers, and spectrum analyzers.
  5. Consumer Electronics: Used in gaming consoles, set-top boxes, and digital cameras for data storage and processing.

Detailed and Complete Alternative Models

  1. IDT6116SA/LA - Similar SRAM chips with different access times (25 ns, 45 ns).
  2. IDT6116SA/LA-12 - Similar SRAM chips with extended temperature range (-55°C to +125°C).
  3. IDT6116SA/LA-15 - Similar SRAM chips with lower power consumption.
  4. IDT6116SA/LA-20 - Similar SRAM chips with faster access time (20 ns).

These alternative models offer variations in access time, temperature range, power consumption, and performance to suit different application requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT6116LA35TP en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT6116LA35TP in technical solutions:

  1. Q: What is IDT6116LA35TP? A: IDT6116LA35TP is a specific type of integrated circuit (IC) known as a static random-access memory (SRAM) chip.

  2. Q: What is the capacity of IDT6116LA35TP? A: The IDT6116LA35TP has a capacity of 2,048 bytes or 2 kilobytes (KB).

  3. Q: What is the operating voltage range for IDT6116LA35TP? A: The operating voltage range for IDT6116LA35TP is typically between 4.5V and 5.5V.

  4. Q: What is the access time of IDT6116LA35TP? A: The access time of IDT6116LA35TP is 35 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Q: Can IDT6116LA35TP be used in battery-powered devices? A: Yes, IDT6116LA35TP can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Q: Is IDT6116LA35TP compatible with other SRAM chips? A: Yes, IDT6116LA35TP is generally compatible with other SRAM chips that have similar specifications and pinouts.

  7. Q: Can IDT6116LA35TP be used in industrial applications? A: Yes, IDT6116LA35TP can be used in various industrial applications where reliable and fast data storage is required.

  8. Q: What is the package type of IDT6116LA35TP? A: IDT6116LA35TP comes in a 24-pin DIP (Dual Inline Package) format.

  9. Q: Can IDT6116LA35TP be used in high-temperature environments? A: Yes, IDT6116LA35TP is designed to operate within a temperature range of -40°C to +85°C, making it suitable for many high-temperature applications.

  10. Q: Are there any special considerations when designing with IDT6116LA35TP? A: It is important to ensure proper decoupling and power supply stability when using IDT6116LA35TP to maintain reliable operation. Additionally, attention should be given to signal integrity and noise immunity during PCB layout.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.