IDT6116LA45SOI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: Low-power, high-speed, static random-access memory (SRAM)
• Package: SOI8 (Small Outline Integrated Circuit 8-pin package)
• Essence: Stores and retrieves digital information in electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 2 kilobits (256 x 8 bits)
• Access Time: 45 nanoseconds
• Operating Voltage: 5 volts
• Standby Current: 100 microamps (maximum)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT6116LA45SOI8 has the following pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Data Input/Output (D0-D7)
5. Address Inputs (A0-A7)
6. Ground (GND)
7. No Connection (NC)
8. Vcc (Power Supply)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Static design ensures data retention even without power supply.
• Easy integration with other ICs due to standard pin configuration.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low standby current prolongs battery life in portable devices. - Small package size saves board space in compact designs.

Disadvantages: - Limited storage capacity compared to modern memory chips. - Relatively higher cost per bit compared to larger memory modules. - Not suitable for applications requiring non-volatile memory.

Working Principles

The IDT6116LA45SOI8 is a static RAM chip that stores digital information using flip-flops. It operates by latching data in response to control signals such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE). When the chip is enabled, data can be read from or written to the memory array through the Data Input/Output pins. The address inputs determine the location of the data within the memory.

Detailed Application Field Plans

The IDT6116LA45SOI8 is commonly used in various electronic devices and systems, including:

1. Microcontrollers: Provides temporary storage for program code and data.
2. Embedded Systems: Used as a scratchpad memory for intermediate calculations.
3. Communication Equipment: Stores configuration settings and temporary buffers.
4. Industrial Control Systems: Holds real-time data and control parameters.
5. Automotive Electronics: Utilized for storing sensor data and system parameters.

Detailed and Complete Alternative Models

Some alternative models to the IDT6116LA45SOI8 include:

1. Samsung KM681000: 128 kilobits SRAM, 55 ns access time, DIP package.
2. Cypress CY62256: 32 kilobits SRAM, 70 ns access time, SOIC package.
3. Micron MT62256: 32 kilobits SRAM, 100 ns access time, TSOP package.
4. Renesas R1LV0416: 64 kilobits SRAM, 85 ns access time, SOP package.
5. ISSI IS61C256: 32 kilobits SRAM, 120 ns access time, TSSOP package.

(Note: The above alternative models are provided for reference purposes and may have different specifications and pin configurations.)

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