IDT71016S12Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin plastic thin small outline package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 12 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 0.400" x 0.875"

Pin Configuration

The IDT71016S12Y has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. I/O0
11. I/O1
12. I/O2
13. I/O3
14. I/O4
15. I/O5
16. I/O6
17. I/O7
18. GND
19. CE2
20. CE1
21. WE
22. OE
23. UB
24. LB
25. A8
26. A9
27. A10
28. A11
29. A12
30. A13
31. A14
32. A15
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Static random-access memory technology provides non-volatile storage.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current prolongs battery life in portable devices. - Reliable data retention ensures long-term storage integrity.

Disadvantages: - Limited memory size may not be sufficient for certain applications. - Higher cost compared to other memory technologies.

Working Principles

The IDT71016S12Y operates based on static random-access memory (SRAM) principles. It stores data using flip-flops, which retain their state as long as power is supplied. The synchronous design ensures that data transfers occur at specific clock intervals, allowing for precise timing and synchronization with other components in the system.

Detailed Application Field Plans

The IDT71016S12Y is commonly used in various electronic devices and systems, including:

1. Computer motherboards
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Medical equipment

Its high-speed and low-power characteristics make it suitable for applications that require fast and reliable data storage and retrieval.

Alternative Models

Below are some alternative models that offer similar functionality:

1. IDT71016S15Y: 1 Megabit SRAM with a 15 nanosecond access time.
2. IDT71016S10Y: 1 Megabit SRAM with a 10 nanosecond access time.
3. IDT71016S08Y: 1 Megabit SRAM with an 8 nanosecond access time.
4. IDT71016S05Y: 1 Megabit SRAM with a 5 nanosecond access time.

These alternative models provide options for different speed requirements in various applications.

In conclusion, the IDT71016S12Y is a high-speed, low-power synchronous SRAM chip that offers reliable data storage and retrieval capabilities. Its compact package and wide operating temperature range make it suitable for diverse electronic applications. However, its limited memory size and higher cost should be considered when selecting the appropriate memory solution for specific projects.