IDT71024S15YI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed static random-access memory (SRAM) - Low power consumption - Small form factor - Reliable performance

Package: 28-pin SOIC (Small Outline Integrated Circuit)

Essence: The IDT71024S15YI is a high-speed SRAM IC that provides fast and reliable data storage and retrieval capabilities.

Packaging/Quantity: The IDT71024S15YI is available in a 28-pin SOIC package. It is typically sold in quantities of one or more.

Specifications

• Memory Size: 1 Megabit (128K x 8 bits)
• Access Time: 15 nanoseconds
• Operating Voltage: 5V
• Standby Current: 10 microamps (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71024S15YI has a total of 28 pins, each serving a specific function. Here is the detailed pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc (+5V Power Supply)

Functional Features

• Fast access time allows for quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures data integrity.
• Easy integration into existing circuit designs due to its standard pin configuration.
• Compatibility with various microcontrollers and processors.

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Small form factor saves space in compact electronic designs.
• Reliable performance ensures data integrity and system stability.
• Easy integration into existing circuit designs simplifies product development.

Disadvantages

• Limited memory size may not be sufficient for certain applications.
• Higher cost compared to other memory technologies with larger capacities.
• Limited operating temperature range may restrict usage in extreme environments.

Working Principles

The IDT71024S15YI is based on static random-access memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read and write operations. The chip enable (CE), output enable (OE), and write enable (WE) pins control the access to the memory array.

Detailed Application Field Plans

The IDT71024S15YI is commonly used in various applications that require fast and reliable data storage, such as: - Computer systems - Networking equipment - Communication devices - Industrial automation - Automotive electronics

Alternative Models

Here are some alternative models that offer similar functionality to the IDT71024S15YI: - Cypress CY7C1041DV33 - Micron MT45W8MW16BGX - Samsung K6R4016V1D

These alternatives provide different memory sizes, access times, and package options, allowing designers to choose the most suitable option for their specific requirements.

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