IDT71T75702S75PF8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: PF8 package
• Essence: Non-volatile memory
• Packaging/Quantity: Single unit

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Memory Size: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Interface: Parallel

Detailed Pin Configuration

The IDT71T75702S75PF8 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. GND
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy efficiency
• Easy integration into existing circuitry
• Reliable performance with long data retention period

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Large storage capacity accommodates a significant amount of data - Low power consumption reduces energy usage - Non-volatile memory ensures data retention even during power loss

Disadvantages: - Limited to parallel interface, may not be compatible with certain systems - Relatively high cost compared to other memory options - Requires careful handling due to sensitivity to electrostatic discharge (ESD)

Working Principles

The IDT71T75702S75PF8 is a static random access memory (SRAM) device. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a 256K x 8 configuration, allowing for the storage of 2 Megabits of data. The device operates at a voltage of 3.3V and has an access time of 7.5 ns, enabling fast data retrieval.

Detailed Application Field Plans

The IDT71T75702S75PF8 is commonly used in various applications that require high-speed and reliable data storage. Some potential application fields include:

1. Networking equipment: Used for buffering and caching data in routers, switches, and network appliances.
2. Telecommunications systems: Provides temporary storage for voice and data in communication devices such as base stations and PBX systems.
3. Industrial automation: Used in control systems and programmable logic controllers (PLCs) to store critical data and program instructions.
4. Automotive electronics: Used in automotive control units for storing sensor data, configuration settings, and firmware updates.
5. Medical devices: Used in medical equipment for data storage and processing, such as patient monitoring systems and diagnostic devices.

Detailed and Complete Alternative Models

1. IDT71V35761S75PF: Similar to IDT71T75702S75PF8, but with a larger memory size of 4 Megabits (512K x 8).
2. Cypress CY62157EV30LL-45ZSXI: SRAM device with a memory size of 2 Megabits (256K x 8) and an access time of 45 ns.
3. Micron MT45W8MW16BGX-701 WT: SRAM device with a memory size of 16 Megabits (2M x 8) and an access time of 70 ns.

These alternative models offer different memory sizes and access times, allowing users to choose the most suitable option based on their specific requirements.

*Note: The