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IDT71T75702S80PF8

IDT71T75702S80PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
  • Package: 80-pin plastic quad flat pack (PQFP)
  • Essence: Provides high-performance memory storage for various electronic devices
  • Packaging/Quantity: Sold individually in a standard package

Specifications

  • Memory Type: Synchronous SRAM
  • Memory Size: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 8 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel
  • Clock Frequency: 80 MHz
  • Power Dissipation: 550 mW (typical)

Pin Configuration

The IDT71T75702S80PF8 has a total of 80 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. GND
  11. A8
  12. A9
  13. A10
  14. A11
  15. A12
  16. A13
  17. A14
  18. A15
  19. A16
  20. A17
  21. A18
  22. A19
  23. A20
  24. A21
  25. A22
  26. A23
  27. A24
  28. A25
  29. A26
  30. A27
  31. A28
  32. A29
  33. A30
  34. A31
  35. DQ0
  36. DQ1
  37. DQ2
  38. DQ3
  39. DQ4
  40. DQ5
  41. DQ6
  42. DQ7
  43. GND
  44. WE#
  45. OE#
  46. CE#
  47. UB#
  48. LB#
  49. VCC
  50. CLK
  51. CLKEN#
  52. CKE#
  53. CS#
  54. RAS#
  55. CAS#
  56. WEN#
  57. OEN#
  58. BHE#
  59. BLE#
  60. VCC
  61. DQ8
  62. DQ9
  63. DQ10
  64. DQ11
  65. DQ12
  66. DQ13
  67. DQ14
  68. DQ15
  69. GND
  70. DQ16
  71. DQ17
  72. DQ18
  73. DQ19
  74. DQ20
  75. DQ21
  76. DQ22
  77. DQ23
  78. VCC
  79. DQ24
  80. DQ25

Functional Features

  • High-speed operation with an access time of 8 ns
  • Low-power consumption for efficient energy usage
  • Synchronous interface for synchronized data transfer
  • Parallel data input/output for fast data handling
  • Easy integration into various electronic systems
  • Reliable and durable memory storage solution

Advantages and Disadvantages

Advantages: - High-performance memory device suitable for demanding applications - Low power consumption helps prolong battery life in portable devices - Synchronous interface allows for efficient data transfer - Large memory size provides ample storage capacity

Disadvantages: - Limited compatibility with certain systems due to the parallel interface - Relatively high power dissipation compared to newer memory technologies

Working Principles

The IDT71T75702S80PF8 is a synchronous SRAM that operates based on the synchronous interface principle. It uses an internal clock signal (CLK) to synchronize data transfers between the memory device and the connected system. The device supports parallel data input and output, allowing for fast and efficient data handling.

Detailed Application Field Plans

The IDT71T75702S80PF8 can be used in various applications that require high-speed and reliable memory storage. Some potential application fields include:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial control systems
  5. Automotive electronics
  6. Medical equipment
  7. Consumer electronics

Alternative Models

Here are some alternative models that offer similar functionality to the IDT71T75702S80PF8:

  1. Micron MT48LC2M32B2P-6A: 2 Megabit Synchronous SRAM, 8 ns access time, 80-pin PQFP package

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71T75702S80PF8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71T75702S80PF8 in technical solutions:

  1. Q: What is IDT71T75702S80PF8? A: IDT71T75702S80PF8 is a specific model of synchronous SRAM (Static Random Access Memory) integrated circuit.

  2. Q: What is the capacity of IDT71T75702S80PF8? A: The IDT71T75702S80PF8 has a capacity of 2 Megabits (256K x 8 bits).

  3. Q: What is the operating voltage range for IDT71T75702S80PF8? A: The operating voltage range for IDT71T75702S80PF8 is typically between 4.5V and 5.5V.

  4. Q: What is the access time of IDT71T75702S80PF8? A: The access time of IDT71T75702S80PF8 is 8 ns (nanoseconds).

  5. Q: Can IDT71T75702S80PF8 be used in battery-powered devices? A: Yes, IDT71T75702S80PF8 can be used in battery-powered devices as long as the operating voltage requirements are met.

  6. Q: Is IDT71T75702S80PF8 compatible with standard microcontrollers? A: Yes, IDT71T75702S80PF8 is compatible with standard microcontrollers that support synchronous SRAM interfaces.

  7. Q: Does IDT71T75702S80PF8 have any built-in error correction capabilities? A: No, IDT71T75702S80PF8 does not have built-in error correction capabilities. External error correction techniques may be required.

  8. Q: Can IDT71T75702S80PF8 operate at high temperatures? A: Yes, IDT71T75702S80PF8 is designed to operate at extended temperature ranges, typically up to 85°C.

  9. Q: What are the typical applications of IDT71T75702S80PF8? A: IDT71T75702S80PF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other embedded systems.

  10. Q: Are there any specific design considerations when using IDT71T75702S80PF8? A: Yes, some design considerations include proper decoupling capacitors, signal integrity, and ensuring proper timing requirements are met for synchronous operation.

Please note that these answers are general and may vary depending on the specific requirements and application of IDT71T75702S80PF8 in a technical solution.