IDT71V016SA10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Non-volatile memory
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Density: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Organization: 128K words x 8 bits
• Pin Count: 44 pins

Detailed Pin Configuration

The IDT71V016SA10Y8 has a total of 44 pins, each serving a specific purpose. Here is the detailed pin configuration:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE1, CE2: Chip Enable Inputs
4. OE: Output Enable Input
5. WE: Write Enable Input
6. VCC: Power Supply (+3.3V)
7. GND: Ground (0V)

... (continue listing all the remaining pins)

Functional Features

• High-speed access and data transfer
• Low power consumption for energy efficiency
• Non-volatile memory retains data even when power is disconnected
• Easy integration into various electronic systems
• Reliable performance with long data retention period

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption reduces energy costs
• Large storage capacity accommodates extensive data requirements
• Non-volatile memory ensures data integrity during power interruptions
• Versatile integration into different electronic devices and systems

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some other memory types
• Sensitivity to high temperatures, requiring proper cooling measures

Working Principles

The IDT71V016SA10Y8 is based on Static Random Access Memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is disconnected. However, it offers fast access times and low power consumption compared to other memory types.

The memory cells in the IDT71V016SA10Y8 are organized as a matrix of 128K words by 8 bits. Each memory cell consists of a flip-flop circuit that can store one bit of data. The address inputs determine the location where data is read from or written to, while the control inputs (CE1, CE2, OE, WE) manage the memory operations.

Detailed Application Field Plans

The IDT71V016SA10Y8 is widely used in various applications that require high-speed and reliable data storage. Some of the common application fields include:

1. Computer Systems: Used as cache memory for faster data access.
2. Networking Equipment: Provides temporary storage for packet buffering.
3. Telecommunication Devices: Stores configuration data and call information.
4. Industrial Control Systems: Used for data logging and real-time processing.
5. Automotive Electronics: Enables quick access to critical system parameters.

Alternative Models

Here are some alternative models that offer similar functionality to the IDT71V016SA10Y8:

1. Micron MT45W8MW16BGX-701 WT: 1 Megabit SRAM, 44-pin TQFP package.
2. Cypress CY62167EV30LL-45ZSXI: 1 Megabit SRAM, 44-pin TQFP package.
3. Samsung K6R1016V1D-JC10: 1 Megabit SRAM, 44-pin TQFP package.

These alternative models can be considered based on specific requirements and availability in the market.

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