IDT71V016SA20YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8 bits)
• Operating Voltage: 3.3V
• Access Time: 20 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 12.8mm x 20.4mm x 1.0mm

Detailed Pin Configuration

The IDT71V016SA20YI8 has a total of 44 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper Byte/Lower Byte Enable Inputs
7. VCC: Power Supply (+3.3V)
8. GND: Ground (0V)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• Synchronous operation with an external clock signal
• Single-cycle read and write operations
• Low power consumption
• Automatic power-down mode when not in use
• Byte-write and page-write capability
• Easy interfacing with microcontrollers and other digital systems

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access
• Low-power design helps conserve energy
• Reliable and durable memory storage
• Easy integration into various electronic systems
• Supports byte and page-level write operations

Disadvantages

• Limited memory capacity compared to newer memory technologies
• Relatively higher cost per unit compared to other memory options
• Requires external clock signal for synchronous operation

Working Principles

The IDT71V016SA20YI8 is a synchronous SRAM that stores and retrieves data using an internal array of memory cells. It operates synchronously with an external clock signal, allowing for precise timing of read and write operations. The memory cells are organized in a 128K x 8-bit configuration, providing a total memory size of 1 Megabit.

During read operations, the desired memory location is selected by applying the appropriate address to the address inputs (A0-A16). The data stored at that location is then made available on the data outputs (DQ0-DQ7) for retrieval.

During write operations, data is written to the selected memory location by applying the desired address and data to the respective inputs. The write enable input (WE#) must be activated to initiate the write operation.

Detailed Application Field Plans

The IDT71V016SA20YI8 is commonly used in various applications that require fast and reliable data storage and retrieval capabilities. Some of the typical application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance.
2. Networking Equipment: Employed in routers, switches, and network interface cards for buffering and temporary storage of data packets.
3. Telecommunications: Utilized in base stations, voice/data switches, and other telecom equipment for storing critical data.
4. Industrial Automation: Integrated into control systems and PLCs (Programmable Logic Controllers) to store program instructions and data.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and digital TVs for data buffering and storage.

Detailed and Complete Alternative Models

1. IDT71V016SA25YI8: Similar to the IDT71V016SA20YI8 but with a faster access time of 25 nanoseconds.
2. IDT71V016SA30YI8: Offers a larger memory size of 2 Megabits (256K x 8 bits) while maintaining similar characteristics.
3. IDT71V016SA35YI8: Provides an even larger memory size of 4 Megabits (512K x 8 bits) with a slightly slower access time of 35 nanoseconds.

(Note: The list above includes only a few alternative models for reference.)

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