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IDT71V3557SA85BQG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
- Package: BGA (Ball Grid Array)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Size: 4 Megabits (4Mb)
- Organization: 512K words x 8 bits
- Operating Voltage: 3.3V
- Access Time: 8.5 ns
- Operating Temperature Range: -40°C to +85°C
- Interface: Synchronous
Detailed Pin Configuration
The IDT71V3557SA85BQG8 has a total of 119 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- NC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- A89
- A90
- A91
- A92
- A93
- A94
- A95
- A96
- A97
- A98
- A99
- A100
- A101
- A102
- A103
- A104
- A105
- A106
- VDD
Functional Features
- High-speed operation: The IDT71V3557SA85BQG8 offers fast access times, allowing for quick data retrieval.
- Low-power consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
- Synchronous interface: The synchronous design ensures efficient communication between the memory device and the host system.
Advantages and Disadvantages
Advantages: - Fast access times enable rapid data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface enhances data transfer efficiency.
Disadvantages: - Limited memory size (4Mb) may not be sufficient for certain applications requiring larger storage capacity. - BGA package may require specialized equipment for installation and repair.
Working Principles
The IDT71V3557SA85BQG8 operates as a synchronous static RAM (SRAM). It stores and retrieves data using electronic circuits that retain
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V3557SA85BQG8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V3557SA85BQG8 in technical solutions:
Question: What is the IDT71V3557SA85BQG8?
Answer: The IDT71V3557SA85BQG8 is a high-speed synchronous static RAM (SRAM) with a capacity of 4 Meg x 18 bits.Question: What are the key features of the IDT71V3557SA85BQG8?
Answer: Some key features include a fast access time of 8.5 ns, low power consumption, and a wide operating voltage range.Question: In what applications can the IDT71V3557SA85BQG8 be used?
Answer: This SRAM can be used in various applications such as networking equipment, telecommunications systems, industrial automation, and embedded systems.Question: What is the operating voltage range for the IDT71V3557SA85BQG8?
Answer: The operating voltage range is typically between 3.0V and 3.6V.Question: Can the IDT71V3557SA85BQG8 operate at higher frequencies?
Answer: Yes, this SRAM can operate at frequencies up to 133 MHz, making it suitable for high-performance applications.Question: Does the IDT71V3557SA85BQG8 support multiple read and write operations simultaneously?
Answer: Yes, it supports simultaneous read and write operations, allowing for efficient data transfer.Question: What is the power consumption of the IDT71V3557SA85BQG8?
Answer: The power consumption is relatively low, with an active power of 550 mW and a standby power of 2 mW.Question: Can the IDT71V3557SA85BQG8 withstand harsh environmental conditions?
Answer: Yes, it is designed to operate in extended temperature ranges (-40°C to +85°C) and can withstand shock and vibration.Question: Does the IDT71V3557SA85BQG8 have any built-in error detection or correction mechanisms?
Answer: No, this SRAM does not have built-in error detection or correction mechanisms. Additional measures may be required for data integrity.Question: Are there any specific design considerations when using the IDT71V3557SA85BQG8?
Answer: It is important to consider signal integrity, proper decoupling, and timing requirements when designing with this SRAM to ensure optimal performance.
Please note that these answers are general and may vary depending on the specific technical solution and requirements.