IDT, Integrated Device Technology Inc
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IDT71V3558S200PF8
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IDT71V3558S200PF8

Product Overview

Category

The IDT71V3558S200PF8 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Package

The IDT71V3558S200PF8 is available in a compact package, designed to fit seamlessly into various electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage capabilities for electronic systems.

Packaging/Quantity

The IDT71V3558S200PF8 is typically packaged in quantities suitable for industrial production and distribution.

Specifications

  • Model: IDT71V3558S200PF8
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 4 Megabits (512K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Organization: 512K words x 8 bits
  • Package Type: 48-pin Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V3558S200PF8 has a total of 48 pins, each serving a specific function within the device. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. /CE2
  27. /OE
  28. /WE
  29. I/O0
  30. I/O1
  31. I/O2
  32. I/O3
  33. I/O4
  34. I/O5
  35. I/O6
  36. I/O7
  37. GND
  38. VCCQ
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage capability
  • Low power consumption
  • Compatibility with various electronic systems
  • Easy integration into existing designs

Advantages and Disadvantages

Advantages

  • Fast operation speed enables efficient data processing.
  • Large storage capacity accommodates extensive data requirements.
  • Low power consumption contributes to energy efficiency.
  • Reliable performance ensures data integrity.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Volatile memory requires continuous power supply for data retention.

Working Principles

The IDT71V3558S200PF8 operates based on the principles of static random access memory (SRAM). It utilizes a matrix of flip-flops to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V3558S200PF8 finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Alternative Models

For those seeking alternative options, the following models provide similar functionality to the IDT71V3558S200PF8: - Micron MT48LC4M32B2P-6A - Samsung K6R4016V1D-UI10 - Cypress CY62157EV30LL-45ZSXI

These alternative models offer comparable specifications and can be considered as substitutes for the IDT71V3558S200PF8.

In conclusion, the IDT71V3558S200PF8 is a high-performance semiconductor memory device that provides efficient data storage capabilities for various electronic systems. With its fast operation speed, large storage capacity, and low power consumption, it offers numerous advantages for designers and engineers in diverse application fields.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V3558S200PF8 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V3558S200PF8 in technical solutions:

  1. Q: What is IDT71V3558S200PF8? A: IDT71V3558S200PF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3558S200PF8? A: IDT71V3558S200PF8 has a capacity of 512K x 36 bits, which means it can store 512 kilobits of data organized into 36-bit words.

  3. Q: What is the operating voltage range for IDT71V3558S200PF8? A: The operating voltage range for IDT71V3558S200PF8 is typically between 3.135V and 3.465V.

  4. Q: What is the access time of IDT71V3558S200PF8? A: The access time of IDT71V3558S200PF8 is 20ns, which refers to the time it takes for the data to be accessed after a read or write command is issued.

  5. Q: Can IDT71V3558S200PF8 operate at higher frequencies? A: Yes, IDT71V3558S200PF8 can operate at higher frequencies by adjusting the clock speed and timing parameters accordingly.

  6. Q: Is IDT71V3558S200PF8 compatible with different interface standards? A: Yes, IDT71V3558S200PF8 supports various interface standards such as asynchronous, synchronous, and burst modes.

  7. Q: Can IDT71V3558S200PF8 be used in battery-powered devices? A: Yes, IDT71V3558S200PF8 can be used in battery-powered devices as it operates within a typical voltage range suitable for such applications.

  8. Q: What are the typical applications of IDT71V3558S200PF8? A: IDT71V3558S200PF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  9. Q: Does IDT71V3558S200PF8 have any built-in error correction capabilities? A: No, IDT71V3558S200PF8 does not have built-in error correction capabilities. External error correction techniques may need to be implemented if required.

  10. Q: Can IDT71V3558S200PF8 be replaced with other SRAM models? A: In most cases, IDT71V3558S200PF8 can be replaced with other compatible SRAM models, but it's important to consider the specific requirements and compatibility of the target application.

Please note that these answers are general and may vary depending on the specific requirements and use cases of the technical solution.