The IDT71V35761S200BQ belongs to the category of integrated circuits (ICs), specifically in the field of memory devices.
This product is primarily used for storing and retrieving digital information in electronic systems. It serves as a high-speed static random-access memory (SRAM) chip.
The IDT71V35761S200BQ is available in a compact and standardized package, commonly known as a dual in-line package (DIP). This package type facilitates easy integration into various electronic systems.
The essence of the IDT71V35761S200BQ lies in its ability to provide high-speed and reliable data storage, contributing to the overall performance of electronic devices.
The IDT71V35761S200BQ is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of [specify quantity].
The IDT71V35761S200BQ has [specify pin count] pins, each serving a specific function. The following is a detailed pin configuration:
The IDT71V35761S200BQ operates based on static random-access memory principles. It utilizes flip-flops to store and retain data, allowing for fast access times. The stored data remains intact as long as power is supplied to the chip.
The IDT71V35761S200BQ finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems
Please note that the above information is subject to change based on the specific manufacturer's datasheet and product variations.
Sure! Here are 10 common questions and answers related to the application of IDT71V35761S200BQ in technical solutions:
Question: What is the IDT71V35761S200BQ?
Answer: The IDT71V35761S200BQ is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 4 Meg x 18.
Question: What are the key features of the IDT71V35761S200BQ?
Answer: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.
Question: What is the typical application of the IDT71V35761S200BQ?
Answer: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance applications that require large amounts of fast memory.
Question: What is the operating voltage range for the IDT71V35761S200BQ?
Answer: The operating voltage range is typically between 3.0V and 3.6V.
Question: What is the maximum clock frequency supported by the IDT71V35761S200BQ?
Answer: The maximum clock frequency is 200 MHz.
Question: Does the IDT71V35761S200BQ support burst mode operation?
Answer: Yes, it supports burst mode operation with programmable burst lengths.
Question: What is the power consumption of the IDT71V35761S200BQ?
Answer: The power consumption varies depending on the operating conditions, but it is generally low due to its low-power CMOS design.
Question: Can the IDT71V35761S200BQ operate in a wide temperature range?
Answer: Yes, it is designed to operate in a wide temperature range, typically from -40°C to +85°C.
Question: Does the IDT71V35761S200BQ have built-in error correction capabilities?
Answer: No, this SRAM does not have built-in error correction capabilities. External error correction techniques may be required for applications that require high reliability.
Question: What is the package type of the IDT71V35761S200BQ?
Answer: The IDT71V35761S200BQ is available in a 100-pin TQFP (Thin Quad Flat Package) package.
Please note that these answers are general and may vary depending on the specific requirements and datasheet of the IDT71V35761S200BQ.