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IDT71V3578YS133PF8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
- Package: 133-pin Fine-Pitch Ball Grid Array (FBGA)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Size: 4 Megabits (4Mb)
- Organization: 512K words x 8 bits
- Operating Voltage: 3.3V
- Access Time: 8.5 ns
- Clock Frequency: 133 MHz
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 10 years
- Standby Current: Less than 1 mA
- Package Dimensions: 13mm x 22mm
Pin Configuration
The IDT71V3578YS133PF8 has a total of 133 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- A89
- A90
- A91
- A92
- A93
- A94
- A95
- A96
- A97
- A98
- A99
- A100
- A101
- A102
- A103
- A104
- A105
- A106
- A107
- A108
- A109
- A110
- A111
- A112
- A113
- A114
- A115
- A116
- A117
- A118
- A119
- A120
- A121
- VDDQ
Functional Features
- High-speed synchronous operation
- Low-power consumption
- Single-cycle read and write operations
- Automatic power-down mode when not in use
- Byte-write capability for easy data manipulation
- On-chip address and control registers for simplified interfacing
Advantages and Disadvantages
Advantages: - Fast access time and clock frequency for efficient data processing
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V3578YS133PF8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V3578YS133PF8 in technical solutions:
Q: What is IDT71V3578YS133PF8? A: IDT71V3578YS133PF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3578YS133PF8? A: IDT71V3578YS133PF8 has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).
Q: What is the operating voltage range for IDT71V3578YS133PF8? A: The operating voltage range for IDT71V3578YS133PF8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3578YS133PF8? A: The access time of IDT71V3578YS133PF8 is 13.5 nanoseconds (ns).
Q: What is the package type for IDT71V3578YS133PF8? A: IDT71V3578YS133PF8 comes in a 100-pin TQFP (Thin Quad Flat Package) form factor.
Q: Can IDT71V3578YS133PF8 be used in battery-powered devices? A: Yes, IDT71V3578YS133PF8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: Is IDT71V3578YS133PF8 compatible with other SRAMs? A: Yes, IDT71V3578YS133PF8 is compatible with other SRAMs that have similar specifications and interface requirements.
Q: What are the typical applications of IDT71V3578YS133PF8? A: IDT71V3578YS133PF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.
Q: Does IDT71V3578YS133PF8 support burst mode operation? A: No, IDT71V3578YS133PF8 does not support burst mode operation. It is a synchronous SRAM designed for random access.
Q: Can IDT71V3578YS133PF8 be used as a cache memory in microprocessors? A: Yes, IDT71V3578YS133PF8 can be used as a cache memory in microprocessors, especially in systems where low latency and high-speed access are required.
Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.