IDT71V3579S75PF

Product Overview

Category

The IDT71V3579S75PF belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Compatibility with various electronic systems

Package

The IDT71V3579S75PF is available in a small form factor package, which ensures easy integration into electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage capabilities for electronic devices.

Packaging/Quantity

The IDT71V3579S75PF is typically packaged in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32M x 16
• Supply Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 48
• Data Retention: >10 years
• Package Type: Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V3579S75PF has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. VSSQ

Functional Features

• High-speed data access and retrieval
• Low power consumption during operation
• Easy integration into electronic systems
• Reliable data retention even in harsh environmental conditions
• Compatibility with various electronic devices and systems

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speeds
• Low power consumption, making it suitable for battery-powered devices
• Large storage capacity for storing a significant amount of data
• Reliable data retention, ensuring the integrity of stored information
• Compatibility with different electronic systems, allowing for versatile applications

Disadvantages

• Limited availability of alternative models with similar specifications
• Relatively higher cost compared to other memory technologies

Working Principles

The IDT71V3579S75PF operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC uses a combination of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The IDT71V3579S75PF finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

While the IDT71V3579S75PF is a highly capable IC, there are alternative models available in the market that offer similar functionality. Some notable alternatives include: - Micron MT48LC32M16A2P-75: 32M x 16 SRAM, 7.5 ns access time - Cypress CY62157EV30LL-45ZSXI: 32M x 16 SRAM, 4.5 ns access time - Samsung K6R4016V1D-UI10: 32M x 16 SRAM, 10 ns access time

These alternative models provide options for designers and engineers to choose the most suitable IC based on their specific requirements.

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