IDT71V3579S75PF8

Product Overview

Category

The IDT71V3579S75PF8 belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Wide operating voltage range

Package

The IDT71V3579S75PF8 is available in a small form factor package, which ensures easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage capabilities for electronic devices.

Packaging/Quantity

The IDT71V3579S75PF8 is typically packaged in reels or trays, with each containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32M x 16
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 48
• Data Retention: >10 years
• Package Type: Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V3579S75PF8 has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSSQ
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. A16
36. A17
37. A18
38. A19
39. A20
40. A21
41. A22
42. A23
43. A24
44. A25
45. A26
46. A27
47. WE#
48. OE#

Functional Features

• High-speed data access and retrieval
• Easy integration into various electronic systems
• Low power consumption for energy-efficient operation
• Reliable data retention even in harsh environmental conditions
• Wide operating voltage range for compatibility with different devices

Advantages and Disadvantages

Advantages

• Fast access time for quick data retrieval
• Large storage capacity for storing a significant amount of data
• Low power consumption, resulting in energy efficiency
• Reliable data retention, ensuring data integrity over time
• Wide operating voltage range, making it compatible with various devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Susceptible to electromagnetic interference (EMI) due to its high-speed operation

Working Principles

The IDT71V3579S75PF8 operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain information as long as power is supplied. The IC utilizes address lines to select specific memory locations and data lines for reading from or writing to those locations.

Detailed Application Field Plans

The IDT71V3579S75PF8 finds applications in various electronic devices that require high-speed and reliable memory storage. Some of the potential application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Medical devices
7. Consumer electronics

Detailed and Complete Alternative Models

1. Micron MT48LC32M16A2P-75
2. Samsung K6R4016V1D-UI10
3. Cypress CY62157EV30LL-45ZSXI
4. Renesas R1LV0416DSB-7SI#B0
5. NXP PDMB32D2G5F-7BE

These alternative models offer similar specifications and functionality to the IDT71V3579S75PF8, providing options for different design requirements and supplier preferences.

*Note