IDT71V416L12PH

Product Overview

Category

The IDT71V416L12PH belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High storage capacity
• Fast access times
• Non-volatile memory
• Low power consumption

Package

The IDT71V416L12PH is available in a 44-pin plastic leaded chip carrier (PLCC) package.

Essence

This product is essential for efficient data storage and retrieval in various electronic applications.

Packaging/Quantity

The IDT71V416L12PH is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit x 16 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Package Dimensions: 28.96mm x 28.96mm x 4.57mm

Detailed Pin Configuration

The IDT71V416L12PH has a total of 44 pins, each serving a specific function. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. OE#
36. CE1#
37. CE2#
38. CE3#
39. CE4#
40. BYTE#
41. LB#
42. UB#
43. GND
44. VCC

Functional Features

• High-speed random access
• Low power consumption
• Easy interfacing with other electronic components
• Byte write and read capability
• Multiple chip enable options for flexible memory expansion

Advantages and Disadvantages

Advantages

• Fast access times allow for quick data retrieval
• Non-volatile memory ensures data retention even during power loss
• Low power consumption helps in energy-efficient designs
• Flexible memory expansion options with multiple chip enable pins

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to newer memory devices
• Susceptible to electromagnetic interference (EMI)

Working Principles

The IDT71V416L12PH operates based on the principles of static random access memory (SRAM). It stores digital information using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a 4 Megabit x 16 bits configuration, allowing for efficient storage and retrieval of data.

Detailed Application Field Plans

The IDT71V416L12PH finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416S10PH - 4 Megabit x 16 bits SRAM, 10 ns access time
2. IDT71V416S15PH - 4 Megabit x 16 bits SRAM, 15 ns access time
3. IDT71V416S20PH - 4 Megabit x 16 bits SRAM, 20 ns access time
4. IDT71V416S25PH - 4 Megabit x 16 bits SRAM, 25 ns access time

These alternative models offer different access times to cater to specific application requirements.

In conclusion, the IDT71V416L12PH is a semiconductor memory device belonging to the SRAM category. It offers high-speed access, low power consumption, and non-volatile memory characteristics. With its detailed pin configuration and functional features, it finds applications in various electronic systems. While it has advantages such as fast access times and flexible memory expansion, it also has limitations like higher cost and limited storage capacity. Understanding its working principles helps in utilizing it effectively in different application fields. Additionally