IDT71V416VL10BEGI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Individual units

Specifications

• Model: IDT71V416VL10BEGI8
• Memory Type: SRAM (Static Random Access Memory)
• Density: 4 Megabits (4Mbit)
• Organization: 512K x 8 bits
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71V416VL10BEGI8 has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCCQ - Power supply voltage for output buffers
2. DQ0-DQ7 - Data input/output pins
3. A0-A18 - Address input pins
4. CE1, CE2 - Chip enable inputs
5. OE - Output enable input
6. WE - Write enable input
7. LB, UB - Lower and upper byte enable inputs
8. CLK - Clock input
9. GND - Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is removed
• Low power consumption for energy efficiency
• Easy integration into various electronic systems
• Reliable performance and data integrity

Advantages and Disadvantages

Advantages: - Fast access time for quick data retrieval - Large storage capacity for storing a significant amount of data - Low power consumption helps conserve energy - Non-volatile memory ensures data retention even during power loss

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some other memory types

Working Principles

The IDT71V416VL10BEGI8 is based on SRAM technology, which utilizes flip-flops to store data. It operates by storing each bit of data in a dedicated flip-flop circuit, allowing for fast access times. The memory cells are organized in a matrix-like structure, with rows and columns forming the addressable locations.

When an address is provided through the address pins, the corresponding data stored in the selected memory cell is accessed and made available through the data pins. The chip enable (CE) input signals determine whether the memory is enabled or disabled, while the output enable (OE) input controls the data output.

Detailed Application Field Plans

The IDT71V416VL10BEGI8 is widely used in various electronic systems that require high-speed and reliable memory storage. Some common application fields include:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • System memory

2. Communication Systems:

   • Network routers and switches
   • Data storage devices
   • Wireless communication devices

3. Industrial Control Systems:

   • Programmable logic controllers (PLCs)
   • Robotics systems
   • Automation equipment

4. Consumer Electronics:

   • Set-top boxes
   • Gaming consoles
   • Digital cameras

Detailed and Complete Alternative Models

1. IDT71V416S
2. IDT71V416YS
3. IDT71V416Z
4. IDT71V416L
5. IDT71V416S

(Note: The list above includes only a few alternative models for reference.)

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