IDT71V416VS10Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Very Small Outline Package (VSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Interface: Synchronous Interface

Pin Configuration

The IDT71V416VS10Y has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCCQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /WE
37. /OE
38. /CE2
39. /CE1
40. /UBS
41. /LBO
42. VCC
43. NC
44. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures reliable and synchronized data transfer.
• Data retention capability of over 20 years ensures long-term storage reliability.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data processing. - Low-power consumption prolongs battery life in portable devices. - Reliable synchronous interface ensures accurate data transfer. - Long data retention period provides reliable storage.

Disadvantages: - Limited memory size (4 Megabits) may not be sufficient for certain applications requiring larger storage capacity. - Higher cost compared to other memory technologies with similar capacities.

Working Principles

The IDT71V416VS10Y is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates at a voltage of 3.3V and employs a synchronous interface for data transfer. The memory cells within the IC are organized into a 4M x 16 configuration, allowing for efficient storage and retrieval of data. The device can be accessed by providing the appropriate address and control signals, enabling read or write operations.

Detailed Application Field Plans

The IDT71V416VS10Y is commonly used in various applications, including:

1. Computer systems - Used as cache memory to improve overall system performance.
2. Networking equipment - Provides high-speed data buffering capabilities.
3. Telecommunications devices - Enables fast data processing and storage in communication systems.
4. Industrial automation - Used for data storage and retrieval in control systems.
5. Consumer electronics - Utilized in devices such as gaming consoles, set-top boxes, and digital cameras for data storage.

Detailed and Complete Alternative Models

1. IDT71V416L10Y: Similar to IDT71V416VS10Y but operates at a lower voltage of 2.5V.
2. IDT71V416S10PH: Offers the same memory size and speed but comes in a different package (Plastic Leaded Chip Carrier).
3. IDT71V416YS12Y: Provides higher access speed (12ns) but with the same memory size and voltage.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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