IDT71V416VS12PHG8

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed synchronous static random-access memory (SRAM) - Low power consumption - 4 Megabit (4M) capacity - 3.3V power supply - 12ns access time - Industrial temperature range (-40°C to +85°C)

Package: Plastic Thin Small Outline Package (TSOP)

Essence: The IDT71V416VS12PHG8 is a high-performance SRAM designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The IDT71V416VS12PHG8 is typically sold in reels, with each reel containing 2500 units.

Specifications

• Organization: 512K words x 8 bits
• Voltage Supply: 3.3V ± 0.3V
• Access Time: 12ns
• Standby Current: 10mA (max)
• Operating Current: 100mA (max)
• Data Retention Voltage: 2.0V (min)
• Package Dimensions: 48-pin TSOP (Type II)

Detailed Pin Configuration

The IDT71V416VS12PHG8 has a total of 48 pins. Here is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE#: Write Enable
4. OE#: Output Enable
5. CE#: Chip Enable
6. UB#/LB#: Upper Byte/Lower Byte Select
7. VCC: Power Supply (+3.3V)
8. GND: Ground (0V)

(Note: Pins 9-48 are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V416VS12PHG8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM is designed to minimize power usage, making it ideal for battery-powered devices or energy-efficient systems.
• Industrial temperature range: With its ability to operate reliably in a wide temperature range (-40°C to +85°C), the IDT71V416VS12PHG8 is suitable for industrial applications.

Advantages and Disadvantages

Advantages: - Fast access time - Low power consumption - Wide operating temperature range - Reliable data retention

Disadvantages: - Relatively small capacity compared to modern memory devices - Limited availability due to being an older model

Working Principles

The IDT71V416VS12PHG8 operates as a synchronous SRAM, which means it synchronizes its internal operations with an external clock signal. When the chip enable (CE#) and output enable (OE#) signals are active, the device can read or write data based on the address inputs (A0-A18) and control signals.

Detailed Application Field Plans

The IDT71V416VS12PHG8 can be used in various applications, including: 1. Embedded systems 2. Networking equipment 3. Communication devices 4. Industrial automation 5. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416VS12PHG8 but operates at a lower voltage (2.5V).
2. IDT71V416S: Higher-speed version of IDT71V416VS12PHG8 with 8ns access time.
3. IDT71V416Y: Enhanced version with additional features such as burst mode and page mode.

(Note: These alternative models are provided as examples and may not cover all available options.)

This encyclopedia entry provides an overview of the IDT71V416VS12PHG8, a high-speed SRAM with 4M capacity. It includes information on its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.