IDT71V416VS12PHGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 16 bits
• Access Time: 12 ns
• Operating Voltage: 3.3V
• Standby Current: 10 mA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Pin Configuration

The IDT71V416VS12PHGI has a total of 44 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSSQ
37. WE#
38. OE#
39. CE#
40. UB#
41. LB#
42. CLK
43. VDD
44. VSS

Functional Features

• High-speed operation: The IDT71V416VS12PHGI offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: This memory device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Synchronous interface: The synchronous design allows for precise timing control and efficient data transfer between the memory and the host system.
• Easy integration: The 44-pin TQFP package enables easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access times enable high-performance data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable and efficient data transfer. - Compact package facilitates easy integration into different applications.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to larger capacity memory devices. - Requires external control signals for proper operation.

Working Principles

The IDT71V416VS12PHGI operates as a synchronous SRAM. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells are organized in a 4 Meg x 16-bit configuration, allowing for the storage of large amounts of data. The synchronous interface ensures that data transfers occur at precise timings, synchronized with an external clock signal. This enables efficient and reliable communication between the memory and the host system.

Detailed Application Field Plans

The IDT71V416VS12PHGI can be used in various applications, including but not limited to:

1. Computer Systems: Used as cache memory to improve system performance by providing fast access to frequently accessed data.
2. Networking Equipment: Enables high-speed data buffering and packet processing in routers, switches, and network appliances.
3. Telecommunications: Used in base stations, voice/data switches, and other communication systems for storing temporary data during call processing.
4. Industrial Automation: Provides fast data storage and retrieval capabilities in control systems, robotics, and factory automation equipment.
5. Automotive Electronics: Used in automotive infotainment systems, engine control units, and other electronic modules that require reliable and high-speed data storage.

Detailed and Complete Alternative Models

1. IDT71V416L10PH - 4 Meg x 16-bit Low-Power SRAM with an access time of 10 ns.
2. IDT71V416S10PH - 4 Meg x 16-bit Synchronous SRAM with an access time of 10 ns and a smaller package size.
3. IDT71V416Y12PH - 4 Meg x 16-bit Synchronous SRAM with an access time of 12 ns and a wider operating temperature range.

These alternative models offer similar