IDT71V416YL15PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: IDT71V416YL15PHI8
• Organization: 4 Meg x 16
• Voltage: 3.3V
• Speed: 15 nanoseconds (ns)
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Power Supply Current: 100 mA (typical)

Pin Configuration

The IDT71V416YL15PHI8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCC
20. WE#
21. OE#
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. CE#
39. UB#
40. LB#
41. CLK
42. VSS
43. NC
44. VCCQ

Functional Features

• High-speed operation: The IDT71V416YL15PHI8 offers fast access times, allowing for quick data retrieval and storage.
• Low-power consumption: This memory device is designed to operate efficiently with low power requirements, making it suitable for battery-powered devices.
• Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable and accurate data transfers.
• Easy integration: The IC can be easily integrated into various electronic systems due to its standard pin configuration and compatibility with common interface protocols.

Advantages and Disadvantages

Advantages: - Fast access times enable efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfers. - Easy integration into existing electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per unit compared to some alternative memory options.

Working Principles

The IDT71V416YL15PHI8 is a synchronous SRAM that stores and retrieves data using a combination of transistors and capacitors. It operates by storing binary information in the form of electrical charges within the capacitors. The stored data can be accessed and modified through specific address lines and control signals. The synchronous operation ensures that data transfers occur precisely with the external clock signal, enabling reliable communication between the memory device and the rest of the system.

Detailed Application Field Plans

The IDT71V416YL15PHI8 is commonly used in various applications that require high-speed and reliable data storage. Some of the typical application fields include:

1. Computer Systems: Used as cache memory in CPUs and other high-performance computing systems.
2. Networking Equipment: Provides fast data buffering capabilities in routers, switches, and network interface cards.
3. Telecommunications: Used in base stations, wireless communication devices, and voice/data transmission systems.
4. Industrial Control Systems: Enables efficient data storage and retrieval in automation and control systems.
5. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and multimedia devices for quick data access.

Detailed and Complete Alternative Models

1. IDT71V416S10PHI: 4 Meg x 16 synchronous SRAM with a speed of 10 ns.
2. IDT71V416L12PHI: 4 Meg x 16 synchronous SRAM with a speed of 12 ns.
3. IDT71V416S15PHI: 4 Meg x 16 synchronous SRAM with a speed of 15 ns.
4. IDT71V416L20PHI: 4 Meg x 16 synchronous SRAM with a speed of 20 ns.
5. IDT71V416S25