IDT71V416YL15Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage Supply: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 12.8mm x 20.0mm x 1.0mm

Detailed Pin Configuration

The IDT71V416YL15Y has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#, LB#: Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation: The IDT71V416YL15Y offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: With a standby current of only 10 µA, this SRAM minimizes power usage, making it ideal for battery-powered devices.
• Synchronous operation: The device synchronizes its internal operations with an external clock signal, ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access times enable efficient data processing. - Low power consumption prolongs battery life. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity compared to other memory devices. - Relatively higher cost per bit compared to alternative memory technologies.

Working Principles

The IDT71V416YL15Y is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The device then reads or writes data from/to the specified memory location based on control signals such as write enable (WE#), output enable (OE#), and chip enable (CE#). The synchronous operation ensures that data transfers occur in synchronization with an external clock signal.

Detailed Application Field Plans

The IDT71V416YL15Y can be used in various applications, including but not limited to: 1. Computer systems: Used as cache memory for faster data access. 2. Networking equipment: Provides high-speed data buffering capabilities. 3. Telecommunications devices: Enables efficient data storage and retrieval in communication systems. 4. Industrial automation: Used for storing critical data in control systems. 5. Consumer electronics: Suitable for applications requiring fast and reliable data storage, such as gaming consoles and digital cameras.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: 4 Meg x 16 SRAM, 10 ns access time, 44-pin TSOP package.
2. Micron MT45W4MW16BFB-708 WT:B: 4 Meg x 16 SRAM, 7.5 ns access time, 48-ball VFBGA package.
3. Cypress CY62157EV30LL-45ZSXI: 4 Meg x 16 SRAM, 45 ns access time, 48-pin TSOP package.

These alternative models offer similar functionality and can be considered as replacements for the IDT71V416YL15Y based on specific requirements and availability.

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