IDT71V416YS15YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 12.80 mm x 20.00 mm x 1.20 mm

Detailed Pin Configuration

The IDT71V416YS15YI8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Byte Enables
7. CLK: Clock Input
8. VCC: Power Supply
9. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V416YS15YI8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: It operates at a low voltage and consumes minimal power, making it energy-efficient.
• Synchronous design: The memory device synchronizes its operations with an external clock signal, ensuring reliable data transfer.
• Easy integration: The 44-pin TSOP package allows for easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption helps conserve energy. - Synchronous design ensures reliable data transfer. - Easy integration due to the compact TSOP package.

Disadvantages: - Limited storage capacity compared to other memory devices. - Relatively higher cost per unit compared to some alternative models.

Working Principles

The IDT71V416YS15YI8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates by receiving address inputs, which specify the location of the data to be accessed. The device synchronizes its operations with an external clock signal, allowing for precise timing of data transfers. When a read operation is initiated, the requested data is outputted on the DQ0-DQ15 pins. Similarly, during a write operation, data is written to the specified memory location.

Detailed Application Field Plans

The IDT71V416YS15YI8 is commonly used in various applications, including:

1. Computer Systems: Used as cache memory or main memory in computer systems to provide fast data access.
2. Networking Equipment: Employed in routers, switches, and network cards to store routing tables and buffer data packets.
3. Telecommunications: Utilized in communication devices such as base stations and voice/data switches for storing temporary data.
4. Industrial Control Systems: Integrated into control units and PLCs (Programmable Logic Controllers) to store program instructions and data.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: Similar 4 Meg x 16 synchronous SRAM with a 44-pin TSOP package.
2. Micron MT45W4MW16BFB-708 WT:B: Comparable 4 Meg x 16 synchronous SRAM with a 44-pin TSOP package.
3. Cypress CY7C1041CV33-15ZSXE: Alternative 4 Meg x 16 synchronous SRAM with a 44-pin TSOP package.

(Note: The list of alternative models can be expanded based on specific requirements and availability in the market.)

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