IDT71V424S15Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed static random-access memory (SRAM)
  • Low power consumption
  • Large storage capacity
• Package: Surface Mount Technology (SMT) package
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: SRAM
• Organization: 4 Megabit (4M) x 4
• Supply Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The IDT71V424S15Y has a total of 32 pins, which are assigned as follows:

1. VCC - Power supply voltage
2. A0-A21 - Address inputs
3. DQ0-DQ3 - Data input/output lines
4. CE1 - Chip enable input
5. CE2 - Output enable input
6. WE - Write enable input
7. OE - Output enable output
8. LB/LB - Byte control inputs
9. UB/UB - Upper byte control inputs
10. GND - Ground

Functional Features

• High-speed operation: The IDT71V424S15Y offers fast access times, allowing for quick data retrieval and storage.
• Low power consumption: This memory device is designed to minimize power usage, making it suitable for battery-powered applications.
• Large storage capacity: With a capacity of 4 Megabits, the IDT71V424S15Y can store a significant amount of data.
• Reliable performance: The SRAM technology used in this device ensures reliable operation and data integrity.

Advantages and Disadvantages

Advantages: - Fast access times - Low power consumption - Large storage capacity - Reliable performance

Disadvantages: - Limited storage capacity compared to other memory technologies (e.g., NAND flash) - Relatively higher cost per bit compared to some other memory devices

Working Principles

The IDT71V424S15Y is based on static random-access memory (SRAM) technology. It stores data using a combination of flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a 4M x 4 configuration, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

The IDT71V424S15Y can be used in various applications that require fast and reliable data storage, such as:

1. Networking equipment: Routers, switches, and network interface cards often utilize SRAM for caching and buffering purposes.
2. Telecommunications systems: SRAM is commonly used in base stations, voice/data switches, and digital signal processors.
3. Industrial control systems: SRAM is employed in programmable logic controllers (PLCs), motor drives, and robotic systems.
4. Automotive electronics: SRAM finds application in engine control units (ECUs), infotainment systems, and advanced driver-assistance systems (ADAS).

Detailed and Complete Alternative Models

1. Cypress CY62157EV30LL-45ZSXI
2. Samsung K6R4016V1D-UI10
3. Micron MT48LC4M16A2TG-75IT

These alternative models offer similar specifications and functionality to the IDT71V424S15Y and can be considered as alternatives based on specific requirements and availability.

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