IDT71V65602S100BG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: 100-ball BGA (Ball Grid Array)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Density: 4 Megabits (256K x 16)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 256K words x 16 bits
• Clock Frequency: 100 MHz
• Data Retention: Greater than 10 years

Pin Configuration

The IDT71V65602S100BG8 has a total of 100 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. A32
44. A33
45. A34
46. A35
47. A36
48. A37
49. A38
50. A39
51. A40
52. A41
53. A42
54. A43
55. A44
56. A45
57. A46
58. A47
59. A48
60. A49
61. A50
62. A51
63. A52
64. A53
65. A54
66. A55
67. A56
68. A57
69. A58
70. A59
71. A60
72. A61
73. A62
74. A63
75. A64
76. A65
77. A66
78. A67
79. A68
80. A69
81. A70
82. A71
83. A72
84. A73
85. A74
86. A75
87. A76
88. A77
89. A78
90. A79
91. A80
92. A81
93. A82
94. A83
95. A84
96. A85
97. A86
98. A87
99. A88
100. VDDQ

Functional Features

• High-speed operation with a clock frequency of 100 MHz
• Low-power consumption for energy-efficient applications
• Synchronous interface for efficient data transfer
• Reliable data retention for more than 10 years
• Wide operating temperature range (-40°C to +85°C)
• Parallel interface for easy integration with other components

Advantages and Disadvantages

Advantages: - High-speed performance suitable for demanding applications - Low-power consumption for energy-efficient devices - Reliable data retention ensures data integrity - Wide operating temperature range allows usage in various environments - Easy integration with other components due to the parallel interface

Disadvantages: - Limited memory capacity (4 Megabits) compared to newer memory technologies - Higher cost per bit compared to larger memory devices - Requires additional circuitry for interfacing with modern microcontrollers

Working Principles

The IDT71V65602S100BG8 is a synchronous SRAM that stores data using flip-flops. It operates based on a clock signal, which synchronizes the read and write operations. When a read operation is initiated, the addressed data is retrieved from the memory array and made available at the output pins. During a write operation, the input data