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IDT71V65802S100BG

IDT71V65802S100BG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous SRAM
  • Package: 100-ball BGA (Ball Grid Array)
  • Essence: Provides high-performance memory storage for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

  • Memory Type: Synchronous Static Random Access Memory (SRAM)
  • Density: 8 Megabits (1 Megabyte)
  • Organization: 512K words x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Clock Frequency: 100 MHz
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C

Pin Configuration

The IDT71V65802S100BG has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. A21
  42. A22
  43. A23
  44. A24
  45. A25
  46. A26
  47. A27
  48. A28
  49. A29
  50. A30
  51. A31
  52. A32
  53. A33
  54. A34
  55. A35
  56. A36
  57. A37
  58. A38
  59. A39
  60. A40
  61. A41
  62. A42
  63. A43
  64. A44
  65. A45
  66. A46
  67. A47
  68. A48
  69. A49
  70. A50
  71. A51
  72. A52
  73. A53
  74. A54
  75. A55
  76. A56
  77. A57
  78. A58
  79. A59
  80. A60
  81. A61
  82. A62
  83. A63
  84. A64
  85. A65
  86. A66
  87. A67
  88. A68
  89. A69
  90. A70
  91. A71
  92. A72
  93. A73
  94. A74
  95. A75
  96. A76
  97. A77
  98. A78
  99. A79
  100. VDDQ

Functional Features

  • High-speed operation with a clock frequency of 100 MHz
  • Low-power consumption for energy-efficient applications
  • Synchronous interface for easy integration with other components
  • Reliable data storage and retrieval
  • Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Low-power consumption helps conserve energy - Synchronous interface simplifies system design and integration - Reliable data storage ensures data integrity - Wide operating temperature range enables usage in various environments

Disadvantages: - Limited memory capacity compared to newer technologies - Parallel interface may require more complex circuitry

Working Principles

The IDT71V65802S100BG is a synchronous SRAM that stores and retrieves data using an internal clock signal. It operates at a clock frequency of 100 MHz, allowing for fast data access. The memory cells are organized into 512K words, with each word consisting of 16 bits. The device operates at a voltage of 3.3V and has an access time of 10 ns.

Detailed Application Field Plans

The IDT71V65802S100BG can be used in various applications that require high-speed and reliable memory storage. Some potential application

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V65802S100BG en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of IDT71V65802S100BG in technical solutions:

  1. Q: What is IDT71V65802S100BG? A: IDT71V65802S100BG is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V65802S100BG? A: The IDT71V65802S100BG has a capacity of 8 Megabits (Mb), which is equivalent to 1 Megabyte (MB).

  3. Q: What is the operating voltage range for IDT71V65802S100BG? A: The operating voltage range for IDT71V65802S100BG is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V65802S100BG? A: The access time of IDT71V65802S100BG is 10 nanoseconds (ns).

  5. Q: Can IDT71V65802S100BG be used in battery-powered devices? A: Yes, IDT71V65802S100BG can be used in battery-powered devices as it operates within a low voltage range.

  6. Q: Is IDT71V65802S100BG compatible with different microcontrollers? A: Yes, IDT71V65802S100BG is compatible with various microcontrollers that support SRAM interfacing.

  7. Q: Does IDT71V65802S100BG support burst mode operation? A: No, IDT71V65802S100BG does not support burst mode operation. It is a synchronous SRAM chip.

  8. Q: Can IDT71V65802S100BG be used in high-speed data processing applications? A: Yes, IDT71V65802S100BG can be used in high-speed data processing applications due to its fast access time.

  9. Q: Does IDT71V65802S100BG have any built-in error correction capabilities? A: No, IDT71V65802S100BG does not have built-in error correction capabilities. Additional error correction techniques may be required.

  10. Q: What are some typical applications of IDT71V65802S100BG? A: IDT71V65802S100BG is commonly used in networking equipment, telecommunications systems, industrial automation, and other embedded systems where fast and reliable memory storage is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.