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IDT71V65802S133BG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous SRAM
- Package: BG8 package (BGA package with 119-ball grid array)
- Essence: The IDT71V65802S133BG8 is a high-performance synchronous static random-access memory (SRAM) designed for use in various electronic devices.
- Packaging/Quantity: Available in bulk packaging, quantity varies based on customer requirements.
Specifications
- Memory Size: 2 Megabits (256K x 8)
- Operating Voltage: 3.3V
- Access Time: 6 ns
- Clock Frequency: 133 MHz
- Interface: Synchronous
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 10 years
Detailed Pin Configuration
The IDT71V65802S133BG8 has a total of 119 pins arranged in a grid array. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- VDDQ
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- VSSQ
- VDDQ
- DQ16
- DQ17
- DQ18
- DQ19
- DQ20
- DQ21
- DQ22
- DQ23
- VSSQ
- VDDQ
- DQ24
- DQ25
- DQ26
- DQ27
- DQ28
- DQ29
- DQ30
- DQ31
- VSSQ
- VDDQ
- DQ32
- DQ33
- DQ34
- DQ35
- DQ36
- DQ37
- DQ38
- DQ39
- VSSQ
- VDDQ
- DQ40
- DQ41
- DQ42
- DQ43
- DQ44
- DQ45
- DQ46
- DQ47
- VSSQ
- VDDQ
- DQ48
- DQ49
- DQ50
- DQ51
- DQ52
- DQ53
- DQ54
- DQ55
- VSSQ
- VDDQ
- DQ56
- DQ57
- DQ58
- DQ59
- DQ60
- DQ61
- DQ62
- DQ63
- VSSQ
- VDDQ
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- VSSQ
- VDDQ
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- VSSQ
- VDDQ
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- VSSQ
- VDDQ
- CLK
- /OE
- /WE
- /LB
- /UB
- /CE2
- /CE1
- VSSQ
Functional Features
- Synchronous operation with an external clock signal
- Burst mode for efficient data transfer
- Low-power consumption
- Automatic power-down mode when not in use
- Byte write and byte read capability
- Easy interfacing with other devices through standard memory interfaces
Advantages and Disadvantages
Advantages
- High-speed operation allows for quick data
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IDT71V65802S133BG8 en soluciones técnicas
Sure! Here are 10 common questions and answers related to the application of IDT71V65802S133BG8 in technical solutions:
Q: What is IDT71V65802S133BG8? A: IDT71V65802S133BG8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V65802S133BG8? A: The IDT71V65802S133BG8 has a capacity of 8 megabits (Mb), which is equivalent to 1 megabyte (MB).
Q: What is the operating voltage range for IDT71V65802S133BG8? A: The operating voltage range for IDT71V65802S133BG8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V65802S133BG8? A: The access time of IDT71V65802S133BG8 is 133 nanoseconds (ns).
Q: What is the package type for IDT71V65802S133BG8? A: IDT71V65802S133BG8 comes in a 119-ball BGA (Ball Grid Array) package.
Q: Can IDT71V65802S133BG8 be used in industrial applications? A: Yes, IDT71V65802S133BG8 is suitable for use in industrial applications due to its robust design and wide operating temperature range.
Q: Is IDT71V65802S133BG8 compatible with other SRAM chips? A: Yes, IDT71V65802S133BG8 is compatible with other SRAM chips that have similar specifications and interface requirements.
Q: Can IDT71V65802S133BG8 be used in battery-powered devices? A: Yes, IDT71V65802S133BG8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: What are some common applications of IDT71V65802S133BG8? A: IDT71V65802S133BG8 is commonly used in networking equipment, telecommunications systems, industrial control systems, and embedded computing applications.
Q: Where can I find more information about IDT71V65802S133BG8? A: You can find more detailed information about IDT71V65802S133BG8 in the datasheet provided by Integrated Device Technology or on their official website.