Infineon Technologies
La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IPB120N10S403ATMA1
Ver Detalle Hojas de datos

IPB120N10S403ATMA1

Product Overview

Category

The IPB120N10S403ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Low on-resistance
  • Fast switching speed

Package

The IPB120N10S403ATMA1 is available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 120A
  • On-Resistance (RDS(on)): 10mΩ
  • Gate Threshold Voltage (VGS(th)): 2V
  • Total Gate Charge (Qg): 120nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB120N10S403ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching performance
  • Enhanced thermal efficiency

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance for reduced power dissipation
  • Suitable for high-frequency switching applications

Disadvantages

  • Higher gate drive requirements compared to some alternative models
  • Limited availability of compatible drivers and controllers

Working Principles

The IPB120N10S403ATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB120N10S403ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Electric vehicle powertrains - Solar inverters - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPB120N10S403ATMA1 include: - IRF1405PBF - FDP8878 - AUIRF7739L2

In conclusion, the IPB120N10S403ATMA1 is a high-performance power MOSFET that offers exceptional characteristics for various high-power switching applications. Its advanced features and specifications make it a preferred choice for demanding electronic designs.

[Word count: 387]

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB120N10S403ATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPB120N10S403ATMA1?

    • The maximum drain-source voltage is 100V.

  2. What is the continuous drain current rating of IPB120N10S403ATMA1?

    • The continuous drain current rating is 120A.

  3. What is the on-state resistance (RDS(on)) of IPB120N10S403ATMA1?

    • The on-state resistance is typically 4.3mΩ at VGS = 10V.

  4. Can IPB120N10S403ATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPB120N10S403ATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPB120N10S403ATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  7. What type of package does IPB120N10S403ATMA1 come in?

    • It comes in a TO-263-7 package.

  8. Is IPB120N10S403ATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching applications.

  9. What gate-source voltage (VGS) is required for proper operation of IPB120N10S403ATMA1?

    • A gate-source voltage of 10V is recommended for proper operation.

  10. Does IPB120N10S403ATMA1 require a heatsink for thermal management?

    • Depending on the application and power dissipation, a heatsink may be necessary for thermal management.