Consulte las especificaciones para obtener detalles del producto.
IPB80N04S4L04ATMA1
Introduction
The IPB80N04S4L04ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Efficient power management and control
- Packaging/Quantity: Typically packaged in reels of 250 or 500 units
Specifications
- Voltage Rating: 40V
- Current Rating: 80A
- On-Resistance: 4mΩ
- Gate Threshold Voltage: 2V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N04S4L04ATMA1 follows the standard pin configuration for a TO-263-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- High voltage capability for versatile applications
Advantages and Disadvantages
Advantages
- High current-carrying capability
- Low on-resistance for reduced power dissipation
- Wide operating temperature range
Disadvantages
- Sensitive to electrostatic discharge (ESD)
- Requires careful handling during assembly and soldering
Working Principles
The IPB80N04S4L04ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB80N04S4L04ATMA1 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB80N04S4L04ATMA1 include: - IRF840 - FDP8870 - STP80NF03L
In conclusion, the IPB80N04S4L04ATMA1 is a highly versatile power MOSFET with exceptional performance characteristics, making it an ideal choice for a wide range of electronic applications.
[Word count: 314]
Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPB80N04S4L04ATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPB80N04S4L04ATMA1?
- The maximum drain-source voltage of IPB80N04S4L04ATMA1 is 40V.
What is the continuous drain current rating of IPB80N04S4L04ATMA1?
- The continuous drain current rating of IPB80N04S4L04ATMA1 is 80A.
What is the on-resistance of IPB80N04S4L04ATMA1?
- The on-resistance of IPB80N04S4L04ATMA1 is typically 4mΩ.
What is the gate threshold voltage of IPB80N04S4L04ATMA1?
- The gate threshold voltage of IPB80N04S4L04ATMA1 is typically 2V.
What is the power dissipation of IPB80N04S4L04ATMA1?
- The power dissipation of IPB80N04S4L04ATMA1 is 300W.
What are the typical applications for IPB80N04S4L04ATMA1?
- IPB80N04S4L04ATMA1 is commonly used in motor control, battery protection, and power management applications.
What is the operating temperature range of IPB80N04S4L04ATMA1?
- The operating temperature range of IPB80N04S4L04ATMA1 is -55°C to 175°C.
Does IPB80N04S4L04ATMA1 have built-in ESD protection?
- Yes, IPB80N04S4L04ATMA1 has built-in ESD protection.
Is IPB80N04S4L04ATMA1 RoHS compliant?
- Yes, IPB80N04S4L04ATMA1 is RoHS compliant.
What package type does IPB80N04S4L04ATMA1 come in?
- IPB80N04S4L04ATMA1 comes in a TO263-7 package.