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IPD090N03LGATMA1
Product Overview
Category
The IPD090N03LGATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Excellent thermal performance
Package
The IPD090N03LGATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 80A
- On-State Resistance (RDS(on)): 9mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 40nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD090N03LGATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Suitable for high-frequency applications
- Enhanced thermal performance
Advantages
- Efficient power handling
- Reduced heat dissipation
- Improved system reliability
- Enhanced circuit efficiency
- Suitable for demanding applications
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
- May require additional protection circuitry in certain applications
Working Principles
The IPD090N03LGATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, the MOSFET switches on, allowing current to flow through the device with minimal resistance.
Detailed Application Field Plans
The IPD090N03LGATMA1 is widely used in: - Power supplies - Motor control systems - DC-DC converters - Battery management systems - LED lighting applications - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPD090N03LGATMA1 include: - IRF3205 - FDP8870 - AOD4184
In conclusion, the IPD090N03LGATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, providing efficient power handling, fast switching speeds, and enhanced thermal performance.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD090N03LGATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD090N03LGATMA1?
- The maximum drain-source voltage of IPD090N03LGATMA1 is 30V.
What is the continuous drain current rating of IPD090N03LGATMA1?
- The continuous drain current rating of IPD090N03LGATMA1 is 75A.
What is the on-state resistance (RDS(on)) of IPD090N03LGATMA1?
- The on-state resistance (RDS(on)) of IPD090N03LGATMA1 is typically 9.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPD090N03LGATMA1?
- The gate threshold voltage of IPD090N03LGATMA1 is typically 2V.
What is the power dissipation of IPD090N03LGATMA1?
- The power dissipation of IPD090N03LGATMA1 is 100W.
Is IPD090N03LGATMA1 suitable for automotive applications?
- Yes, IPD090N03LGATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPD090N03LGATMA1?
- The operating temperature range of IPD090N03LGATMA1 is -55°C to 175°C.
Does IPD090N03LGATMA1 have built-in ESD protection?
- Yes, IPD090N03LGATMA1 features built-in ESD protection.
What package type does IPD090N03LGATMA1 come in?
- IPD090N03LGATMA1 is available in a TO-252-3 package.
Is IPD090N03LGATMA1 RoHS compliant?
- Yes, IPD090N03LGATMA1 is RoHS compliant.