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IPD122N10N3GATMA1
Product Overview
Category
The IPD122N10N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPD122N10N3GATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 120A
- On-Resistance (RDS(on)): 3.3mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD122N10N3GATMA1 has a standard pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for responsive performance
Disadvantages
- Higher gate charge compared to some alternative models
- Limited availability in certain package types
Working Principles
The IPD122N10N3GATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD122N10N3GATMA1 is well-suited for use in: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPD122N10N3GATMA1 include: - IPD122N10N3G - IPD122N10N3 - IPD122N10N
In conclusion, the IPD122N10N3GATMA1 is a high-performance power MOSFET with versatile applications in various electronic and power systems, offering high voltage capability, low on-resistance, and fast switching speed. Its use in switching power supplies, motor control systems, and other applications makes it an essential component in modern electronic designs.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD122N10N3GATMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD122N10N3GATMA1?
- The maximum drain-source voltage of IPD122N10N3GATMA1 is 100V.
What is the continuous drain current rating of IPD122N10N3GATMA1?
- The continuous drain current rating of IPD122N10N3GATMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPD122N10N3GATMA1?
- The on-state resistance (RDS(on)) of IPD122N10N3GATMA1 is typically 3.7mΩ at VGS = 10V.
Can IPD122N10N3GATMA1 be used in automotive applications?
- Yes, IPD122N10N3GATMA1 is designed for use in automotive applications.
What is the operating temperature range of IPD122N10N3GATMA1?
- The operating temperature range of IPD122N10N3GATMA1 is -55°C to 175°C.
Does IPD122N10N3GATMA1 have built-in ESD protection?
- Yes, IPD122N10N3GATMA1 features built-in ESD protection.
What is the gate threshold voltage of IPD122N10N3GATMA1?
- The gate threshold voltage of IPD122N10N3GATMA1 is typically 2.5V.
Is IPD122N10N3GATMA1 suitable for high-frequency switching applications?
- Yes, IPD122N10N3GATMA1 is suitable for high-frequency switching applications.
What package type does IPD122N10N3GATMA1 come in?
- IPD122N10N3GATMA1 is available in a TO-252-3 package.
Are there any application notes or reference designs available for using IPD122N10N3GATMA1 in power management solutions?
- Yes, application notes and reference designs are available for using IPD122N10N3GATMA1 in power management solutions.