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IPD50R500CEATMA1
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IPD50R500CEATMA1

Product Overview

Category

The IPD50R500CEATMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The IPD50R500CEATMA1 is typically available in a TO-252-3 (DPAK) package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 4.5A
  • On-Resistance (RDS(on)): 0.5Ω
  • Total Gate Charge (Qg): 16nC
  • Avalanche Energy (EAS): 160mJ

Detailed Pin Configuration

The IPD50R500CEATMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for responsive performance

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • May require additional circuitry for optimal performance in some applications

Working Principles

The IPD50R500CEATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IPD50R500CEATMA1 is widely used in: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPD50R500CEATMA1 include: - IPD50R500CE - Similar specifications with slight variations - IPD50R450CE - Lower drain-source voltage rating - IPD50R600CE - Higher drain-source voltage rating

In conclusion, the IPD50R500CEATMA1 is a high-performance power MOSFET with versatile applications in power electronics, offering a balance of high voltage capability, low on-resistance, and fast switching speed.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD50R500CEATMA1 en soluciones técnicas

  1. What is the maximum drain-source voltage of IPD50R500CEATMA1?

    • The maximum drain-source voltage is 500V.

  2. What is the continuous drain current of IPD50R500CEATMA1?

    • The continuous drain current is 50A.

  3. What is the on-resistance of IPD50R500CEATMA1?

    • The on-resistance is typically 0.032 ohms.

  4. Can IPD50R500CEATMA1 be used in automotive applications?

    • Yes, it is designed for use in automotive applications.

  5. What is the operating temperature range of IPD50R500CEATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD50R500CEATMA1 have built-in protection features?

    • Yes, it has built-in overcurrent protection and thermal shutdown.

  7. Is IPD50R500CEATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching due to its low gate charge and output capacitance.

  8. What type of package does IPD50R500CEATMA1 come in?

    • It comes in a TO-252-3 package.

  9. Can IPD50R500CEATMA1 be used in power supplies?

    • Yes, it can be used in power supply applications.

  10. Are there any application notes or reference designs available for using IPD50R500CEATMA1?

    • Yes, application notes and reference designs are available to assist with implementing IPD50R500CEATMA1 in technical solutions.