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IPD60R520C6ATMA1
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IPD60R520C6ATMA1

Product Overview

Category

The IPD60R520C6ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The IPD60R520C6ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 4.5A
  • Power Dissipation (PD): 48W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD60R520C6ATMA1 has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low input capacitance for high-speed switching applications
  • Enhanced avalanche energy capability
  • Improved dv/dt ruggedness

Advantages and Disadvantages

Advantages

  • High voltage capability allows for use in a wide range of applications
  • Low gate charge enables fast switching speeds
  • Enhanced avalanche energy capability ensures reliability in harsh conditions

Disadvantages

  • Higher on-resistance compared to some alternative models
  • Limited continuous drain current compared to higher-power MOSFETs

Working Principles

The IPD60R520C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IPD60R520C6ATMA1 is suitable for various applications including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD60R520C6ATMA1 include: - IPD60R520E6ATMA1 - IPD60R520E6ATMA2 - IPD60R520E6ATMA3

In conclusion, the IPD60R520C6ATMA1 is a versatile power MOSFET with high voltage capability and fast switching characteristics, making it suitable for a wide range of electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD60R520C6ATMA1 en soluciones técnicas

  1. What is the maximum drain current of IPD60R520C6ATMA1?

    • The maximum drain current of IPD60R520C6ATMA1 is 24A.

  2. What is the typical on-state resistance of IPD60R520C6ATMA1?

    • The typical on-state resistance of IPD60R520C6ATMA1 is 52mΩ.

  3. What is the voltage rating of IPD60R520C6ATMA1?

    • IPD60R520C6ATMA1 has a voltage rating of 600V.

  4. Can IPD60R520C6ATMA1 be used in high-frequency applications?

    • Yes, IPD60R520C6ATMA1 is suitable for high-frequency applications.

  5. Does IPD60R520C6ATMA1 have built-in protection features?

    • Yes, IPD60R520C6ATMA1 has built-in overcurrent and thermal protection.

  6. What type of package does IPD60R520C6ATMA1 come in?

    • IPD60R520C6ATMA1 comes in a TO-252-3 package.

  7. Is IPD60R520C6ATMA1 RoHS compliant?

    • Yes, IPD60R520C6ATMA1 is RoHS compliant.

  8. What are the typical applications for IPD60R520C6ATMA1?

    • Typical applications for IPD60R520C6ATMA1 include motor control, power supplies, and lighting.

  9. What is the operating temperature range of IPD60R520C6ATMA1?

    • The operating temperature range of IPD60R520C6ATMA1 is -55°C to 150°C.

  10. Does IPD60R520C6ATMA1 require an external gate driver?

    • Yes, IPD60R520C6ATMA1 requires an external gate driver for proper operation.