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IPD60R650CEAUMA1
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IPD60R650CEAUMA1

Product Overview

Category

The IPD60R650CEAUMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor for various electronic applications, including power supplies, motor control, and lighting.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Enhanced body diode dV/dt and di/dt capability

Package

The IPD60R650CEAUMA1 comes in a TO-252-3 package.

Essence

This MOSFET is designed to provide efficient power management and control in electronic circuits.

Packaging/Quantity

It is typically packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 6.0A
  • On-Resistance (RDS(on) max): 0.65 Ohm
  • Power Dissipation (PD): 48W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD60R650CEAUMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.
  • Enhanced body diode capability provides robustness in freewheeling applications.

Advantages

  • Efficient power management
  • Robust body diode capability
  • Low power dissipation
  • Wide operating temperature range

Disadvantages

  • Relatively low continuous drain current compared to some alternative models
  • May require additional circuitry for specific applications

Working Principles

The IPD60R650CEAUMA1 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of power through the device.

Detailed Application Field Plans

This MOSFET is suitable for use in: - Switched-mode power supplies - Motor drive circuits - LED lighting applications - Inverter and converter circuits

Detailed and Complete Alternative Models

Some alternative models to consider include: - IPD60R650E6 (similar specifications with different package) - IPD60R650C6 (similar specifications with different package) - IPD60R650E (lower on-resistance, higher continuous drain current)

In conclusion, the IPD60R650CEAUMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD60R650CEAUMA1 en soluciones técnicas

  1. What is the maximum drain current of IPD60R650CEAUMA1?

    • The maximum drain current of IPD60R650CEAUMA1 is 24A.

  2. What is the typical gate charge of IPD60R650CEAUMA1?

    • The typical gate charge of IPD60R650CEAUMA1 is 16nC.

  3. What is the on-state resistance of IPD60R650CEAUMA1?

    • The on-state resistance of IPD60R650CEAUMA1 is 0.065 ohms.

  4. What is the maximum power dissipation of IPD60R650CEAUMA1?

    • The maximum power dissipation of IPD60R650CEAUMA1 is 300W.

  5. What is the operating temperature range of IPD60R650CEAUMA1?

    • The operating temperature range of IPD60R650CEAUMA1 is -55°C to 150°C.

  6. What is the gate-source voltage of IPD60R650CEAUMA1?

    • The gate-source voltage of IPD60R650CEAUMA1 is ±20V.

  7. What is the input capacitance of IPD60R650CEAUMA1?

    • The input capacitance of IPD60R650CEAUMA1 is 2700pF.

  8. What is the output capacitance of IPD60R650CEAUMA1?

    • The output capacitance of IPD60R650CEAUMA1 is 520pF.

  9. What are the typical applications for IPD60R650CEAUMA1?

    • Typical applications for IPD60R650CEAUMA1 include motor control, power supplies, and DC-DC converters.

  10. Is IPD60R650CEAUMA1 RoHS compliant?

    • Yes, IPD60R650CEAUMA1 is RoHS compliant.