IPD65R660CFDATMA1

Product Overview

Category

The IPD65R660CFDATMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

• High voltage capability
• Low gate charge
• Fast switching speed
• Low on-resistance

Package

The IPD65R660CFDATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 6.6A
• Power Dissipation (PD): 48W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of the IPD65R660CFDATMA1 includes: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

• Low input and output capacitance for high-speed switching
• Enhanced avalanche energy capability
• Improved dv/dt ruggedness

Advantages and Disadvantages

Advantages

• High voltage capability allows for versatile applications
• Low gate charge enables fast switching
• Enhanced avalanche energy capability ensures reliability

Disadvantages

• Higher on-resistance compared to some alternative models
• Limited maximum operating temperature

Working Principles

The IPD65R660CFDATMA1 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current through the device.

Detailed Application Field Plans

The IPD65R660CFDATMA1 is widely used in: - Switching power supplies - Motor control systems - LED lighting applications - Solar inverters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the IPD65R660CFDATMA1 include: - IPD65R600C7: Similar voltage and current ratings - IPD65R660C7: Comparable characteristics and package type - IPD60R600P7S: Lower on-resistance and higher power dissipation

In conclusion, the IPD65R660CFDATMA1 is a high-voltage power MOSFET with fast switching capabilities, making it suitable for a wide range of power management applications.

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