La imagen puede ser una representación.
Consulte las especificaciones para obtener detalles del producto.
IRF7809AVTRPBF

IRF7809AVTRPBF

Product Overview

Category

The IRF7809AVTRPBF belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IRF7809AVTRPBF is typically available in a TO-252 package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 38A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (VGS) ±20V

Detailed Pin Configuration

The IRF7809AVTRPBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows it to handle large loads.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control of the connected load.

Advantages

  • Suitable for high-power applications
  • Low power dissipation
  • Reliable and durable

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The IRF7809AVTRPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Power supplies - Motor control - LED lighting - Audio amplifiers - Switching regulators

Detailed and Complete Alternative Models

Some alternative models to the IRF7809AVTRPBF include: - IRF7811W - IRF7832 - IRF7842 - IRF7854

In conclusion, the IRF7809AVTRPBF is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power electronic applications.

[Word count: 314]