DS1230Y-200

Product Overview

Category

The DS1230Y-200 belongs to the category of non-volatile static RAM (NVSRAM).

Use

It is commonly used as a memory storage device in various electronic systems.

Characteristics

• Non-volatile: Retains data even when power is removed.
• Static RAM: Provides fast read and write access times.
• Low power consumption: Operates at low power levels.
• High reliability: Offers robust data retention and endurance.

Package

The DS1230Y-200 is available in a 28-pin DIP (Dual In-line Package) format.

Essence

The essence of DS1230Y-200 lies in its ability to combine the benefits of both SRAM and non-volatile memory technologies.

Packaging/Quantity

The product is typically packaged individually and sold in quantities suitable for specific project requirements.

Specifications

• Capacity: 32 kilobits (4 kilobytes)
• Organization: 4K x 8 bits
• Access Time: 200 nanoseconds
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1230Y-200 has a total of 28 pins, each serving a specific purpose. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A10)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. VCC (+5V)

Functional Features

• Battery-backed non-volatile storage: Allows data retention during power loss.
• Fast read and write operations: Facilitates efficient data access.
• Automatic store on power down: Ensures data integrity during power interruptions.
• High endurance: Supports a large number of read and write cycles.

Advantages

• Reliable data storage: Data remains intact even in the absence of power.
• Fast access times: Enables quick retrieval and modification of stored information.
• Low power consumption: Reduces energy requirements, making it suitable for battery-powered devices.
• Easy integration: Compatible with standard memory interfaces.

Disadvantages

• Limited storage capacity: Suitable for small-scale applications but may not be sufficient for larger data storage needs.
• Reliance on battery backup: Requires a reliable power source to maintain data integrity.

Working Principles

The DS1230Y-200 utilizes a combination of SRAM and non-volatile memory technologies. It employs a small onboard battery to provide continuous power supply, ensuring data retention even when the main power source is disconnected. The device uses static RAM cells for fast read and write operations, while the non-volatile memory ensures that data is preserved during power loss.

Detailed Application Field Plans

The DS1230Y-200 finds application in various fields, including:

1. Embedded systems: Provides non-volatile storage for critical system parameters and configurations.
2. Industrial automation: Stores important data such as calibration values and operating parameters.
3. Automotive electronics: Used for storing diagnostic information and event logs.
4. Medical devices: Enables reliable storage of patient data and device settings.
5. Communication systems: Facilitates quick access to frequently used data in networking equipment.

Detailed and Complete Alternative Models

1. DS1230AB-100: Similar to DS1230Y-200 but with a different access time (100 nanoseconds).
2. DS1230AB-150: Another alternative with a slightly slower access time (150 nanoseconds).
3. DS1230AB-250: Offers a higher access time (250 nanoseconds) but at a lower cost.

These alternative models provide options with varying specifications to suit different application requirements.

In conclusion, the DS1230Y-200 is a non-volatile static RAM that combines the benefits of SRAM and non-volatile memory technologies. It offers reliable data storage, fast access times, and low power consumption. With its various applications and alternative models, it provides flexibility for different project needs.