24AA256T-I/MNY

Product Overview

Category

The 24AA256T-I/MNY belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: Retains stored data even when power is removed.
• Electrically erasable: Allows for easy modification of stored data.
• High storage capacity: The 24AA256T-I/MNY has a storage capacity of 256 kilobits (32 kilobytes).
• Low power consumption: Designed to operate with minimal power requirements.
• Wide operating voltage range: Can function within a voltage range of 1.7V to 5.5V.
• I2C interface: Utilizes the popular I2C communication protocol for easy integration into existing systems.

Package

The 24AA256T-I/MNY is available in a small surface-mount package, typically measuring 8-pin SOIC (Small Outline Integrated Circuit).

Essence

The essence of the 24AA256T-I/MNY lies in its ability to provide reliable and non-volatile data storage in a compact and low-power package.

Packaging/Quantity

This product is typically packaged in reels or tubes, with quantities varying depending on customer requirements.

Specifications

• Storage Capacity: 256 kilobits (32 kilobytes)
• Operating Voltage Range: 1.7V to 5.5V
• Interface: I2C
• Package Type: 8-pin SOIC

Detailed Pin Configuration

The 24AA256T-I/MNY features the following pin configuration:

1. VCC - Power supply voltage
2. SDA - Serial data input/output for I2C communication
3. SCL - Serial clock input for I2C communication
4. WP - Write protect pin (optional)
5. A0, A1, A2 - Device address selection pins
6. GND - Ground

Functional Features

• Byte-level Read/Write: Allows individual bytes to be read from or written to the memory.
• Page Write: Supports writing multiple bytes at once, improving write efficiency.
• Sequential Read: Enables sequential reading of data without requiring repeated addressing.
• Software Write Protection: Provides a mechanism to protect stored data from accidental modification.
• High Reliability: Built-in error detection and correction mechanisms ensure data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Compact package size allows for easy integration into various electronic devices.
• Low power consumption extends battery life in portable applications.
• I2C interface simplifies communication with other devices.
• High reliability features minimize data corruption risks.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to some alternative memory types.
• Susceptible to electromagnetic interference due to its small package size.

Working Principles

The 24AA256T-I/MNY utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping electrical charges within floating gate transistors. These charges can be selectively removed or added using electrical signals, allowing for data modification. The I2C interface facilitates communication between the chip and the controlling device, enabling data transfer and manipulation.

Detailed Application Field Plans

The 24AA256T-I/MNY finds application in various fields, including:

1. Microcontrollers: Used for storing program code, configuration settings, and calibration data.
2. Embedded Systems: Provides non-volatile storage for system parameters, sensor data, and log files.
3. Consumer Electronics: Enables storage of user preferences, firmware updates, and device-specific data.

Detailed and Complete Alternative Models

1. 24LC256: Similar EEPROM chip with the same storage capacity and I2C interface.
2. AT24C256: Another compatible EEPROM chip from a different manufacturer.
3. M24M02: Serial EEPROM with higher storage capacity and faster write speeds.

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements.

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