AT25080AN-10SU-2.7

Product Overview

Category

AT25080AN-10SU-2.7 belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for storing small amounts of non-volatile data in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The data stored in AT25080AN-10SU-2.7 remains intact even when power is removed.
• Electrically erasable and programmable: The chip allows for easy modification of stored data through electrical signals.
• High storage capacity: AT25080AN-10SU-2.7 has a storage capacity of 8 kilobits (1 kilobyte).
• Low power consumption: The chip operates at a low voltage of 2.7V and consumes minimal power during read/write operations.

Package

AT25080AN-10SU-2.7 is available in a small outline SOIC-8 package.

Essence

The essence of AT25080AN-10SU-2.7 lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

AT25080AN-10SU-2.7 is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 8 kilobits (1 kilobyte)
• Operating Voltage: 2.7V
• Interface: Serial Peripheral Interface (SPI)
• Write Endurance: 1 million cycles
• Data Retention: 100 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AT25080AN-10SU-2.7 follows the standard pin configuration for Serial EEPROM chips:

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SI/SO)
4. Write Protect (WP)
5. Ground (GND)
6. VCC (Power Supply)
7. Not Connected (NC)
8. Not Connected (NC)

Functional Features

• Byte-level Read/Write: AT25080AN-10SU-2.7 allows individual bytes to be read from or written to, providing flexibility in data manipulation.
• Sequential Read: The chip supports sequential read operations, enabling efficient retrieval of consecutive data bytes.
• Software Protection: The Write Protect (WP) pin can be used to protect the stored data from accidental modification.
• High-Speed Performance: AT25080AN-10SU-2.7 offers fast read and write operations, making it suitable for time-critical applications.

Advantages and Disadvantages

Advantages

• Compact form factor
• Non-volatile memory
• Easy data modification
• Low power consumption
• High storage capacity

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively slower write speeds compared to some alternatives

Working Principles

AT25080AN-10SU-2.7 utilizes electrically controlled floating gate transistors to store and retrieve data. When a byte is written, an electrical charge is trapped in the floating gate, altering the transistor's behavior. This charge can be later detected to determine the stored value. Reading involves applying appropriate voltages to access the desired memory location and interpreting the resulting electrical signals.

Detailed Application Field Plans

AT25080AN-10SU-2.7 finds application in various fields, including but not limited to: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to AT25080AN-10SU-2.7 include: - AT25040AN-10SU-2.7: 4 kilobits (0.5 kilobyte) capacity variant - AT25128AN-10SU-2.7: 128 kilobits (16 kilobytes) capacity variant - AT25256AN-10SU-2.7: 256 kilobits (32 kilobytes) capacity variant

These alternatives offer different storage capacities to suit specific application requirements.

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