AT28C256-15JU

Product Overview

Category

AT28C256-15JU belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is commonly used for non-volatile storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The AT28C256-15JU has a capacity of 256 kilobits (32 kilobytes).
• Low power consumption: It operates at low voltage levels, making it energy-efficient.
• Fast access time: The chip has a maximum access time of 150 nanoseconds.

Package

The AT28C256-15JU comes in a 28-pin plastic J-lead chip carrier (PLCC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring that important data is retained even during power interruptions or system shutdowns.

Packaging/Quantity

The AT28C256-15JU is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer or supplier.

Specifications

• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Maximum Access Time: 150 ns
• Memory Organization: 32K x 8 bits
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 10 years

Detailed Pin Configuration

The AT28C256-15JU has a total of 28 pins, each serving a specific function. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. OE - Output Enable
18. CE - Chip Enable
19. WE - Write Enable
20. I/O0 - Data Input/Output
21. I/O1 - Data Input/Output
22. I/O2 - Data Input/Output
23. I/O3 - Data Input/Output
24. I/O4 - Data Input/Output
25. I/O5 - Data Input/Output
26. I/O6 - Data Input/Output
27. I/O7 - Data Input/Output
28. Vcc - Power Supply

Functional Features

• High-speed operation: The AT28C256-15JU offers fast access times, allowing for efficient data retrieval and storage.
• Easy integration: It can be easily integrated into existing electronic systems due to its standard pin configuration and compatibility with common microcontrollers.
• Reliable data retention: The chip ensures long-term data retention, making it suitable for critical applications where data integrity is crucial.
• Low power consumption: The AT28C256-15JU operates at low voltage levels, minimizing power consumption and extending battery life in portable devices.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data remains intact even during power loss or system shutdowns.
• High storage capacity: The chip offers a large storage capacity of 256 kilobits.
• Fast access time: It provides quick data retrieval and storage operations.
• Easy integration: The standard pin configuration allows for easy integration into various electronic systems.

Disadvantages

• Limited erase/write cycle endurance: The AT28C256-15JU has a maximum endurance of 10,000 cycles, which may be a limitation in certain applications requiring frequent data updates.
• Relatively small memory size: While 256 kilobits is sufficient for many applications, it may not meet the requirements of high-capacity data storage needs.

Working Principles

The AT28C256-15JU utilizes a combination of electrically erasable and programmable memory technology. It stores data in a grid of memory cells that can be individually programmed or erased using electrical signals. When data is written to the chip, the corresponding memory cells are programmed with the desired information. Similarly, when data needs to be erased or modified, specific memory cells