AT29BV020-15TC

Product Overview

Category

AT29BV020-15TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT29BV020-15TC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device offers a fast access time of 150 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT29BV020-15TC is available in a surface-mount 32-lead TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring data integrity even during power interruptions or system failures.

Packaging/Quantity

The AT29BV020-15TC is typically packaged in reels containing 250 units per reel.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 150 ns
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT29BV020-15TC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. NC
25. GND
26. RP#
27. BYTE#
28. A15
29. A13
30. A8
31. A9
32. A11

Functional Features

• Byte-wide and word-wide operations: The AT29BV020-15TC supports both byte and word-level read, write, and erase operations.
• Hardware and software protection: It offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• Fast programming time: The device allows for quick programming of data, reducing overall system latency.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity during power interruptions.
• High storage capacity suitable for a wide range of applications.
• Low power consumption extends battery life in portable devices.
• Fast access time improves overall system performance.

Disadvantages

• Limited erase/write cycle endurance compared to other non-volatile memory technologies.
• Relatively higher cost compared to traditional volatile memory options.

Working Principles

The AT29BV020-15TC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The device uses a combination of transistors and floating gate structures to trap and store charge, representing binary data.

During programming, the device applies a high voltage to the selected memory cells, causing electrons to tunnel through a thin oxide layer and become trapped in the floating gate. This process alters the threshold voltage of the cell, allowing it to be read as either a "0" or "1" bit.

Erasing the memory involves applying a higher voltage that removes the trapped charge from the floating gate, resetting the cell to its initial state.

Detailed Application Field Plans

The AT29BV020-15TC finds applications in various fields, including: 1. Microcontrollers and embedded systems 2. Automotive electronics 3. Industrial control systems 4. Consumer electronics (e.g., digital cameras, set-top boxes) 5. Medical devices 6. Communication equipment

Detailed and Complete Alternative Models

1. AT29BV010A-12JC: 1 Megabit Flash EEPROM with a 120 ns access time.
2. AT45DB161E-SHN-T: 16 Megabit DataFlash with a serial interface and 85 ns access time.
3. SST39VF3201B-70-4C-EKE: 32 Megabit Multi-Purpose Flash with a 70 ns access time and extended temperature range.

These alternative models offer similar functionality and can be considered as alternatives to the AT29BV020-15TC based on specific application requirements.

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